wf vqe 24 d
Abstract: 2N5898 2N5989 225AB 25CC 2N5991 MBD5300 TO-225AB mbd-5300 Transistor J3T 3 pin
Contextual Info: MOTOROLA SC XSTRS/R F 12Ë D | b3L?254 OG 0MS?b ? | ^33 NPN MOTOROLA SEMICONDUCTOR 2N5989 2N5991 TECHNICAL DATA 12 AM PERE POWER PLASTIC COM PLEM ENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COM PLEM ENTARY SILICON * '* .J .J. . designed fo r use In g eneral-purpose am p lifier and sw itching
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b3l72542n59892n5991wf vqe 24 d+72n5898225ab25ccmbd5300to-225abmbd-5300transistor j3t 3 pin
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2N5986
Abstract: 2N5988 2N5991 2N5987 2N5989
Contextual Info: DE | b 3 b 7 2 5 4 0000404 2 | ~ MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC <XSTRS/R F 96DS0404 D ~pr-3 3-/S PNP MOTOROLA T' 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE H IG H POWER PLASTIC C O M P LE M E N TA R Y S IL IC O N POWER TRANSISTO RS
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2N5990
Abstract: 2N5991 2N5989 2N5986 2N599 2N598
Contextual Info: Inchange Semiconductor Product Specification 2N5989 2N5990 2N5991 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2N5986/5987/5988 ・Low collector saturation voltage APPLICATIONS ・Designed for use in general purpose
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2N5987
Abstract: 2N5990 2N5991 2N5988 2N5989 2N5986
Contextual Info: Product Specification www.jmnic.com 2N5989 2N5990 2N5991 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2N5986 2N5987 2N5988 ・Low collector-emitter saturation voltage APPLICATIONS ・Designed for use in general purpose
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2n6991
Abstract: 2N5969
Contextual Info: ^mi-Conductor <Piodueti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5986, 2N5987 2N5988 NPN 2N5989, 2N5991 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS TOWER TRANSISTORS
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2N69S
Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
Contextual Info: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching
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2N5991
Abstract: 2N5987 2N5988 2N5989 225AB TO-225AB 2N5986 2N6988 transistor 2 Amp 3 volt 2sc 3138
Contextual Info: • -X - MOTOROLA SC -CXSTRS/R F> = ” ^ x - ^ « ÎW ÎB PNP MOTOROLA 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA « 1» 1 / NPN * 2N5989, 2N5991 « * 4 4 % 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON
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2n59862n59892n59872n5988+72n5991n5988225abto-225ab2n6988transistor 2 amp 3 volt2sc 3138
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2N5986
Abstract: 2N5987 2N5988 2N5989 2N5991 MBD5300 sc 0645 225AB diode F4 3J 75S4
Contextual Info: MOTOROLA SC 6367254 DE | b 3 t . 7 2 S 4 -tXSTRS/R F> MOTOROLA SC XSTRS/R F 96D Ö 0 4 0 4 OoaOMDM D - p r .3 3 - m T PNP MOTOROLA ’ 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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"Tektronix 475"
Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
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48/buxbux48bux48aampere32+16tip73btip74tip74atip74btip75tip75atektronix 475equivalent 2n6488tip42c equivalentbu108motorola darlington power transistormotorola 266 to-204aa transistord45h11 equivalent replacementpnp buxtransistor replacement table for transistortip3055 equivalent
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D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
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mje16204tip73btip74tip74a+15tip74btip75tip75atip75btip75cd42c5transistor bc 6472n5302 ebpin out transistor tip2955bs170 replacement2sc141bu108bc 658motorola transistors mje3055 to 127mc7812 to-220
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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mje521mje371tip73btip74+16tip74atip74btip75tip75atip75btip75cmje521 equivalentbu1082n3055 plastic2n6488 motorolamotorola transistors mje3055 to 1273904 transistorbdx54tip122 tip127 audio ampbu326bu100
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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mjl3281amjl1302atip73btip74+14tip74atip74btip75tip75asec tip41cmje4932sc14192sc32812n3055 audio output circuitbdw93mj1000bdw83buv98a cross reference2sc1943
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
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Transistor 2sC1060
Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
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bdw46bdw42/bdw47220abbdw42+15bdw47tip73btip74tip74atip74btransistor 2sc10602sd4602sc143all similar transistor 2sa715bu108mj4102sd404bd241cbut56bdw59
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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