2N5891 Search Results

ASZ16

Abstract: asz1015 AL103 AD143 2N3611 PNP Germanium ASZ17 2SB407 2SB40 MP2062 ASZ15
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number >C Part Number Manufacturer Type Max V BR CEO (A) Of) PD Max hre *T ON) Min (HZ) Max km Max (A) (8) ICBO r (CE)Mt Max (Ohms) T Oper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 ASZ1015 AUY30 AUY28 AUY28

2N4588

Abstract: dtg110 2S8337 ASZ1015 ASZ1018 2N4568 PTC120A 2S8407 AL113 MP3618
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 30 2S8465 2N1906 AUY28 AUY28 AUY28 2Nl1378 2Nl136A 2Nl1368 ~~~~~~ 35 40 AL103 AL103 AL103 AL102 AL102 AL102 2N5887 2N456A ~r-:,~~~~ 45 50 2N5888 2N5889 2N4568 2N457A MP3611 2N3611 2S8338 2S8337 ~~~~~~

2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

Contextual Info: GERMANIUM POWER TRANSISTORS Type N um ber Case Type Y CBO V ^ ' IO V C U R R E N T G A IN y,„ , V ^ CES V V Min. V Max. A S A T U R A T IO N V O L TA G E S Vctm Kit,., V V A A 0, c ° C /W 6 A M P G E R M A N IU M P N P C o n t. 2N1137B 2N1138 2N 1138A

2N1100

Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N1100 Power Transistor

Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s

2N3614

Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022

2N69S

Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
Contextual Info: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A