MMBT Search Results

sot 23 marking code 1ja

Contextual Info: MMBT2369LT1G, MMBT2369LT1G, MMBT2369ALT1G, MMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6

MMBTA55

Abstract: MMBTA56
Contextual Info: Transistors IC SMD Type Driver Transistors MMBTA55,MMBTA56 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT-23 package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

MMBT5089

Abstract: MMBT5088
Contextual Info: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

TRANSISTOR m29

Abstract: marking M29
Contextual Info: MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking MMBT2907A M29 s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP

marking code m1b

Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
Contextual Info: MMBT2222L, MMBT2222AL, MMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

SMMBTA13LT1G

Abstract: SMMBTA14LT1G
Contextual Info: MMBTA13LT1G, MMBTA13LT1G, MMBTA14LT1G, MMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

Contextual Info: MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

transistor marking code 3EM SOT-23

Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
Contextual Info: MMBTH10LT1G, MMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

Contextual Info: MMBT2222AWT1G, MMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com

sot-323 code 50k

Contextual Info: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR

ST-300

Abstract: MMBT3906 SOT-23
Contextual Info: MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904 s

sot-23 Marking M1F

Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
Contextual Info: MMBT5550L, MMBT5551L, MMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

MMBT7002K

Contextual Info: MMBT7002K MMBT7002K N-Channel Enhancement Mode FET with protected Gate N-Kanal FET mit Gateschutzdiode – Anreicherungstyp N N Version 2011-02-01 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3

J-STD-020A

Abstract: MMBT3904T MMBT3904T-7 MMBT3904T-7-F MMBT3906T
Contextual Info: MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT3904T Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906T Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-523 ·

marking 1p transistor

Abstract: MMBT2222AT-7-F J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT TRANSISTOR MARKING CODE 1P
Contextual Info: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222AT Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907AT Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-523

marking code 1AM

Abstract: CODE 1AM MMBT3904 1am 1AM marking N-MMBT3904
Contextual Info: MMBT3904 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT3906 MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

Contextual Info: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain

MMBTA42

Abstract: MMBTA92 transistor marking code 7e IBM type 1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA

2N4400

Abstract: MMBT4400 PN2222A
Contextual Info: S S E fv llG O fs lO L J C îT Q R 2N4400 MMBT4400 M a rk : 83 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se a s g e n e ra l p u rp o s e a m p lifiers a n d s w itc h e s req uirin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d

MMBT5551L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G „ ORDERING INFORMATION Normal MMBT5551-x-AE3-R

1AM c

Abstract: 1AM marking transistor
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

MMBT2222ALT1G

Abstract: m1b marking mmbt222 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol