MMBTA42 Search Results

Transistor A12

Contextual Info: MMBTA42/MMBTA43 350mW, NPN Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: Transistors SMD Type Product specification MMBTA42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NPN Silicon 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

Contextual Info: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).

marking AAX

Abstract: MMBTA42 MMBTA42 AAX NPN MMBTA42 MMBTA43
Contextual Info: SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES E B L L D Complementary to MMBTA92/93. SYMBOL MMBTA42 Voltage MMBTA43 Collector-Emitter MMBTA42 Voltage MMBTA43 UNIT 300 VCBO

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA42 Features • • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation Continuous Collector Current : 300mA

MMBTA42LT1

Abstract: MMBTA43 MMBTA43LT1
Contextual Info: ON Semiconductort High Voltage Transistor MMBTA42LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Symbol MMBTA43 Unit Collector–Emitter Voltage Rating VCEO 200 Vdc Collector–Base Voltage VCBO 200 Vdc Emitter–Base Voltage VEBO 6.0 Vdc

Contextual Info: MMBTA42 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBTA92 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

MMBTA42LT1

Contextual Info: MMBTA42LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTGE TRANDIDTOR * Complement to MMBTA92LT1 * High Collector-Emitter Voltage:Vcbo= 300V * Collector Current: Ic= 500mA * Collector Dissipation: Pc=225mW Ta=25℃

pnp transistor 300v sot23

Contextual Info: MMBTA92LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTGE TRANDIDTOR * Complement to MMBTA42LT1 * High Collector-Emitter Voltage:Vcbo= -300V * Collector Current: Ic= -500mA * Collector Dissipation: Pc=225mW Ta=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR NPN SOT-23 FEATURES z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA42LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM: 0.3 A

1D SOT 23-6

Abstract: SOT-23 m1e MMBTA42LT1G
Contextual Info: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol MMBTA42

Contextual Info: High Voltage Transistors NPN Silicon MMBTA42LT1 MMBTA43LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol 1 Value MMBTA42 MMBTA43 Unit 2 Collector–Emitter Voltage V CEO 300 200 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage V CBO 300 200

ccb board

Abstract: Vce(sat) MMBTA42 MMBTA43 MMBTA92 MMBTA93
Contextual Info: MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package

marking a42 sot-23

Abstract: sot23 marking code a42 MPSA42 sot-223 EIA rs 481 SOT23 MARK Y3 mps a42 transistor mps a42 a42 sot-223 Marking code mps
Contextual Info: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*

Contextual Info: SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES 1999. 11. 30 Revision No : 3 1/2

mmtba42

Contextual Info: MMBTA42, MMBTA43 NPN High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-02-27 Type Code 1.3 ±0.1 2.5 max 3 Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca.

125OC

Abstract: MMBTA42 MMBTA92
Contextual Info: MMBTA42 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * High breakdown voltage * Low collector-emitter saturation voltage * Complementary to MMBTA92 (NPN) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

MMBTA42

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTA42 Features • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation NPN Silicon High Voltage Transistor C Pin Configuration Top View 1D B E

MMBTA42

Abstract: MMBTA43 MMBTA92 MMBTA93
Contextual Info: MMBTA42 / MMBTA43 MMBTA42 / MMBTA43 Surface mount High Voltage Transistors Hochspannungs-Transistoren für die Oberflächenmontage NPN NPN Version 2005-06-21 1.1 2.9 ±0.1 0.4 ±0.1 Type Code 1.3 2.5 max 3 2 1 1.9 Dimensions / Maße [mm] 1=B 2=E 3=C Power dissipation

Contextual Info: MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBTA42 Ideal for Medium Power Amplification and Switching SOT-23 H ;h~A TOR VIEW • • • • • Case: SOT-23, Molded Plastic

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBTA42 Features • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation NPN Silicon High Voltage Transistor C Pin Configuration

MMBTA42

Abstract: MMBTA42LT1 MMBTA43 MMBTA43LT1
Contextual Info: ON Semiconductort MMBTA42LT1* MMBTA43LT1 High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Symbol MMBTA42 MMBTA43 Unit Collector–Emitter Voltage Rating VCEO 300 200 Vdc Collector–Base Voltage VCBO 300 200 Vdc Emitter–Base Voltage

MMBTA42

Abstract: MMBTA42LT1 MMBTA43 MMBTA43LT1
Contextual Info: MOTOROLA Order this document by MMBTA42LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon MMBTA42LT1* MMBTA43LT1 COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA42 MMBTA43 Unit Collector – Emitter Voltage