MMBTA43 Search Results

Contextual Info: Product specification MMBTA43 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NPN Silicon 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

MMBTA42LT1G

Abstract: MMBTA42 MMBTA42LT3G MMBTA43 MMBTA43LT1G
Contextual Info: MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Collector −Emitter Voltage Collector −Base Voltage

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA43 Features Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA43 Features • • x Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation Case Material: Molded Plastic. UL Flammability

Contextual Info: ON Semiconductort High Voltage Transistor MMBTA42LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Symbol MMBTA43 Unit Collector–Emitter Voltage Rating VCEO 200 Vdc Collector–Base Voltage VCBO 200 Vdc Emitter–Base Voltage VEBO 6.0 Vdc

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA43 Features • • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation Case Material: Molded Plastic. UL Flammability

MMBTA42LT1G

Abstract: MMBTA42 MMBTA42LT1 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1 sot23 marking 1d SOT-23 m1e
Contextual Info: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Symbol Collector −Emitter Voltage Value Unit VCEO

MMBTA42LT1G

Abstract: 1D SOT 23-6 MMBTA42 MMBTA42LT1 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1 MMBTA43LT1G MMBTA42LT
Contextual Info: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Symbol Collectorā-āEmitter Voltage Value Unit VCEO MMBTA42 MMBTA43

MMBTA92

Abstract: MMBTA42 MMBTA43 MMBTA93
Contextual Info: MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the NPN transistors MMBTA42 and MMBTA43 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter

MMBTA43

Contextual Info: Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBTA43 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 200 Vdc Collector-Base Voltage VCBO 200 Vdc Emitter-Base Voltage VEBO 6.0 Vdc

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA43 Features • • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant "P" Suffix designates

MMBTA42

Abstract: MMBTA43
Contextual Info: MMBTA42 MMBTA43 High-Voltage NPN Transistor Surface Mount P b Lead Pb -Free COLLECTOR 3 3 1 1 BASE 2 2 EMITTER Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol SOT-23 Value Unit Collector-Emitter Voltage MMBTA42 MMBTA43 VCEO 300 200 V Collector-Base Voltage

MMBTA43

Abstract: MPSA42 MPSA43 MPSA42 NATIONAL NATIONAL MPSA42 CO2V
Contextual Info: MPSA431 MMBTA43 & Discrete P O W ER & S ig n a l Technologies National S e m i c o n d u c t o r ” M M BTA43 M PSA43 SOT-23 Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color C RT and other high voltage applications. Sourced

Contextual Info: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: High Voltage Transistors NPN Silicon MMBTA42LT1 MMBTA43LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol 1 Value MMBTA42 MMBTA43 Unit 2 Collector–Emitter Voltage V CEO 300 200 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage V CBO 300 200

Contextual Info: S E M IC O N D U C T O R tm MPSA43 C MMBTA43 TO-92 Bl Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA43 Features • • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant "P" Suffix designates

MMBTA42

Abstract: MMBTA43 MMBTA92 MMBTA93
Contextual Info: MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the NPN transistors MMBTA42 and MMBTA43 are recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package

BTA43

Abstract: BTA42LT1 BTA42
Contextual Info: M A X IM U M R A T IN G S Rating Symbol MMBTA42 MMBTA43 Unit VCEO 300 200 Vdc C o lle c t o r - B a s e V o lt a g e VCBO 300 200 Vdc E m itt e r - B a s e V o lt a g e v EBO 6 .0 C o ll e c t o r - E m i t t e r V o lt a g e C o lle c t o r C u r r e n t — C o n t in u o u s

Contextual Info: MOTOROLA Order this document by MMBTA42LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BASE MAXIMUM RATINGS Rating Symbol MMBTA42 MMBTA43 Unit C o lle c to r-E m itte r Voltage v CEO 300 200 Vdc C o lle c to r-B a s e Voltage v CBO

Transistor A12

Contextual Info: MMBTA42/MMBTA43 350mW, NPN Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

CBVK741B019

Abstract: F63TNR MMBTA43 MPSA42 MPSA43 PN2222N DATE CODE FAIRCHILD
Contextual Info: MPSA43 MMBTA43 C E C B TO-92 B SOT-23 E Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*

marking AAX

Abstract: MMBTA42 MMBTA42 AAX NPN MMBTA42 MMBTA43
Contextual Info: SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES E B L L D Complementary to MMBTA92/93. SYMBOL MMBTA42 Voltage MMBTA43 Collector-Emitter MMBTA42 Voltage MMBTA43 UNIT 300 VCBO

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA43 Features • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation NPN Silicon High Voltage Transistor C Pin Configuration