MMBT222 Search Results

marking code m1b

Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
Contextual Info: MMBT2222L, MMBT2222AL, MMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

Contextual Info: MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

Contextual Info: MMBT2222AWT1G, MMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com

marking 1p transistor

Abstract: MMBT2222AT-7-F J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT TRANSISTOR MARKING CODE 1P
Contextual Info: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222AT Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907AT Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-523

MMBT2222ALT1G

Abstract: m1b marking mmbt222 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol

MARKING CODE 1P

Abstract: CODE 1P
Contextual Info: MMBT2222A NPN General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2907A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

Marking Code 2F

Abstract: code 2F
Contextual Info: MMBT2907A PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2222A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

Contextual Info: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES FEATURES • · · Epitaxial Epitaxial Planar Planar Die Die Construction Construction SOT-323 A Complementary PNP

IMX17

Abstract: DUAL TRANSISTOR
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ FEATURES * *Two MMBT2222A chips in an SMT package. * Transistor elements are independent, eliminating interference. * High collector current. IC=500mA. * Mounting cost an area can be cut in half.

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

MMBT2222AGH

Abstract: 1N914
Contextual Info: Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 MMBT2222AGH BASE 1 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO

Contextual Info: Product specification MMBT2222A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Complementary PNP type available MMBT2907A 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1

Contextual Info: Product specification MMBT2222AT SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 -0.1 1.0 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Ultra-Small Surface Mount Package +0.01 0.1-0.01 0.55 • Features ● Complementary PNP type available MMBT2907AT 0.35 3 +0.25

2F P marking

Abstract: J-STD-020A MMBT2222AT MMBT2907AT
Contextual Info: MMBT2907AT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222AT Ultra-Small Surface Mount Package SOT-523 A C Mechanical Data · · · · · · · · B C TOP VIEW Case: SOT-523, Molded Plastic

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT2222A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration

IC 7403

Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

MMBT2222ATT1G

Abstract: 1N914 MMBT2222ATT1
Contextual Info: MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. http://onsemi.com Features

PN2222A

Abstract: fairchild 1P MMBT2222A PZT2222A PN2222 pn222
Contextual Info: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223

MMBT2222A

Abstract: PN2222A PZT2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

MMBT2907FW

Contextual Info: MMBT2907FW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 A FEATURES 3  Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222FW 

MMBT2907AW

Abstract: MMBT2222AW
Contextual Info: MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE    A Complementary NPN Type Available MMBT2222AW Epitaxial Planar Die Construction

2F TRANSISTOR

Abstract: MMBT2222AE MMBT2907AE marking 2f
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2907AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B FEATURES Complementary NPN Type available(MMBT2222AE)

Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1