MMBT2907AW Search Results

Contextual Info: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0

MMBT2907AW

Abstract: MMBT2222AW
Contextual Info: MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE    A Complementary NPN Type Available MMBT2222AW Epitaxial Planar Die Construction

Contextual Info: MOTOROLA Order this document by MMBT2907AWT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2907AW T1 PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the S O T -3 2 3 /S C -7 0 package

MMBT2222AW

Contextual Info: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE    Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction

Contextual Info: MMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. http://onsemi.com Features

Contextual Info: ON Semiconductort General Purpose Transistor MMBT2907AWT1 PNP Silicon ON Semiconductor Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.

MMBT2907AWT1

Abstract: sot3
Contextual Info: MOTOROLA Order this document by MMBT2907AWT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2907AWT1 PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package

MMBT2907AT

Abstract: MMBT2907AW
Contextual Info: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SOT-323 SC-70 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0 -600 Symbol VCEO VCBO

Contextual Info: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0

MMBT2907AWT1

Abstract: SMD310
Contextual Info: ON Semiconductort General Purpose Transistor MMBT2907AWT1 PNP Silicon ON Semiconductor Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.

MMBT290

Abstract: MMBT2907AW
Contextual Info: MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value MMBT2907W MMBT2907AW 60 Unit Collector Base Voltage -VCBO Collector Emitter Voltage

MMBT2907AW

Contextual Info: MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Value Symbol Unit MMBT2907W MMBT2907AW Collector Base Voltage -VCBO 60 Collector Emitter Voltage

Contextual Info: Product specification MMBT2907AW Features General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO -60 V Collector-base voltage VCBO

Contextual Info: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SOT-323 SC-70 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0 -600 Symbol VCEO VCBO

Contextual Info: Bipolar Transistors Switching Transistors NPN − MMBT3904WT1 − MMBT2222AWT1 MMBT4401WT1 − MMBT3904TT1 − MMBT2222ATT1 PNP MMBT2907AWT1 − MMBT3906WT1 − − MMBT4403WT1 − MMBT3906TT1 − V BR CEO IC mA Max Min 60 40 40 40 40 40 600 200 200 600 600

Contextual Info: MMBT2907AWT1 Preferred Device General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. http://onsemi.com

Contextual Info: MMBT2907AWT1G, MMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. http://onsemi.com

MMBT2907AWT1G

Contextual Info: MMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. http://onsemi.com Features

M7A transistor

Abstract: transistor M7A
Contextual Info: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)

MMBT2907AWT1

Abstract: 2F MMBT2907AWT1 2K22
Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistor PNP Silicon MMBT2907AWT1 These transistors are designed for general purpose mplifier applications. They are housed in the SOT–323/ SC–70 package which is designed for low power surface

MMBT2907AWT1G

Abstract: on semiconductor marking code 2F
Contextual Info: MMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com Features

SILICON GENERAL

Abstract: Transistor MARKING 1P 1P NPN TRANSISTOR code marking 1P 3 1p transistor sot323 MMBT2222AW MMBT2907AW TRANSISTOR MARKING CODE 1P mmbt2907* transistor marking 1p transistor
Contextual Info: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE    Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction

Contextual Info: MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free SOT-323 Epitaxial Planar Die Construction A Complementary NPN Type Available MMBT2222AW L Ideal for Medium Power Amplification and

Contextual Info: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)