TOP220YAI
Abstract: TOP221YAI EN50065-1 TOP-220 HIGH FREQUENCY Transformer ee19 EN50065 TOP220Y TOP220 core ee19 transformer schematic PWR-TOP221YAI
Contextual Info: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 OC FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS TOP220YAI. REFER TO APPLICATION CIRCUIT OF FIGURE 3. Developed to Power: Echelon's PLT-20 Power Line Transceiver PARAMETER
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op220yaiplt-20250vrms10mhz+15390ufuf4005byv27-100250vac300matop220yaitop221yaien50065-1top-220high frequency transformer ee19en50065top220ytop220core ee19 transformer schematicpwr-top221yai
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TOP-220
Abstract: TOP220 top 220 2SK1834 2SK183
Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0
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TOP227
Abstract: TOP-220 TOP222 TOP221 TOP223 application note specification of curve tracer top223y top227y Top224 TOP222y TOP223
Contextual Info: April 1997 TOP221-227Y PRODUCT SPECIFICATION Document Number Customer Name PS027-001 SONY PI Signatory Date Customer Signatory Date W.B. Smith, Dir. QA&R This specification is a controlled document and is distributed to customers. Each customer recipient must
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op221-227yps027-001pi-1940-0900396op227+15op226op225op224op223op222top227top-220top222top221top223 application notespecification of curve tracertop223y top227ytop224top222ytop223
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TOP-220
Abstract: top 220 2SK1834 2sk18 TOP220
Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 7.5±0.2 4.0 14.0±0.5 Symbol
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TOP-220
Abstract: top 220
Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 4.2±0.2 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
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TOP-220
Contextual Info: Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 4.2±0.2 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
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TOP-220
Abstract: 2SK1833 TOP220 top 220 ta202
Contextual Info: Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0
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2SK1833
Abstract: TOP-220 TOP220 top 220 2sk18 ta202
Contextual Info: Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 16.7±0.3 7.5±0.2 4.0 14.0±0.5 Symbol
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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