2SK180 Search Results

EN4114

Abstract: q 4114 2SK180 2SK1806 N1593 2sk18
Contextual Info: I Òr d e rin g n u m b e r : EN 4 1 1 4 2SK1806 No.4114 N -Channel Junction Silicon FET SAiYO Low-Frequency G eneral-Purpose Amp Applications Im pedance conversion i Z f / / à JlC • . s . F e a tu re s / / / / •Low frequency am plifiers, impedance conversion, ideal for p o te n ti/r p fe te r s |a n a l^ s w itc h ^ , and

2SK1808

Abstract: 2SK1340 DSA003639
Contextual Info: 2SK1808 Silicon N-Channel MOS FET ADE-208-1322 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

2SK1340

Abstract: 2SK1807 DA40
Contextual Info: 2SK1807 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 2 3 1. Gate

Contextual Info: 2SK1807 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline

Contextual Info: 2SK1809 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline

Contextual Info: 2SK1809 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC—DC converter Table 1 Absolute Maximum Ratings Ta = 25 ° C

Contextual Info: Panasonic Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 60mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 80ns No secondary breakdown 15.0+0.3 11 . 0 + 0.2

Contextual Info: 2SK1809 Silicon N Channel MOS FET REJ03G0976-0200 Previous: ADE-208-1323 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter

2SK1404

Abstract: 2SK1809 Hitachi DSA00397
Contextual Info: 2SK1809 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3

2SK1805

Abstract: transistors ai 757 10-lmA
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1805 Field Effect Transistor U n it in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Fe a tu re s • Low Drain-Source ON Resistance

k1340

Contextual Info: 2SK1808 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resi stance High speed switching L ow drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM

transistor ai 757

Abstract: ai 757 2SK1805 S-15 2sk18
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1805 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 10±0.3 . 03.2 ±0.2 2.7±0.2 High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • Low Drain-Source ON Resistance

Hitachi DSA002748

Contextual Info: 2SK1808 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM

Contextual Info: Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET • Features ● Avalanche capacity guaranteed: EAS > 60mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 80ns ● No secondary breakdown unit: mm 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2 1.1±0.1

2SK1809

Abstract: 2SK1809-E PRSS0004AC-A
Contextual Info: 2SK1809 Silicon N Channel MOS FET REJ03G0976-0200 Previous: ADE-208-1323 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: 2SK1808 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline

2SK1803

Contextual Info: Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET • Features ● Avalanche capacity guaranteed: EAS > 60mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 80ns ● No secondary breakdown unit: mm ● Contactless relay ● Diving circuit for a solenoid

k 2057

Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
Contextual Info: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805

2SK1805

Contextual Info: TOSHIBA 2SK1805 Field Effect Transistor Unit in m m Silicon N Channel MOS Type rc-MOS III.5 High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • Low Drain-Source ON Resistance ~ r D S ( O N ) = 0.78£2 (Typ.)

Hitachi DSA002779

Contextual Info: 2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 1 2 3

Contextual Info: 2SK1809 Silicon N Channel MOS FET REJ03G0976-0200 Previous: ADE-208-1323 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter

Hitachi DSA002748

Contextual Info: 2SK1807 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB

Hitachi DSA002748

Contextual Info: 2SK1809 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline TO-220AB

Hitachi DSA002780

Contextual Info: 2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3