CAPACITANCE155 Search Results

Contextual Info: Panasonic Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 60mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 80ns No secondary breakdown 15.0+0.3 11 . 0 + 0.2

2SK1613

Contextual Info: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

2SK1614

Contextual Info: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

MJ 800

Contextual Info: P o w e r F -M O S Panasonic F E T s 2SK1611 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator, AC adaptor)

Contextual Info: Panasonic Power F-M OS FETs 2SK1608 Silicon N-Channel Power F-MOS U nit : rrnn I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)

2SK1612

Contextual Info: Panasonic Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS Unit : rrnn I Features 4.2±0.2 ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic 03.1±O.1 I Applications ►High-speed switching (switching mode regulator)

2SK1833

Abstract: D15A
Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK1833 Silicon N-Channel Power F-MOS • Features U nit : mm 10.0±0.2 • Avalanche energy capability guaranteed : EAS > 90mJ , 5.5±0.2 , 4.2±0.2 2.7±0.2 • V gss=±30V guaranteed • High-speed switching : t|= 30ns

Contextual Info: Panasonic Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Low ON-resistance R ds oii : R ds(oii)= 0.32£2(typ) High-speed switching : tf = 140ns(typ) No secondary breakdown High breakdown voltage, large allowable power dissipation