2SK1608 Search Results

2SK1608

Contextual Info: 2SK1608 Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS Unit : mm • Applications ● High-speed ø3.1±0.1 switching switching mode regulator high-frequency power amplification 14.0±0.5 ● For 2.7±0.2 4.2±0.2 RDS(on), high-speed switching characteristic

Contextual Info: 2SK1608 Switching Diodes MA1U152K Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 0.95 2 0.7–0 +0.1 ● di p Pl lan nclu ea e se pla m d m des

Contextual Info: 2SK1608 Switching Diodes MA1U152K Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 2 0.7–0 +0.1 ● 3 0.4–0.05 in the high-speed mounting machine

Contextual Info: Panasonic Power F-M OS FETs 2SK1608 Silicon N-Channel Power F-MOS U nit : rrnn I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK1603

Abstract: 2SK1601 2SK1606 2SK1580 2SK1582 2SK1583 2SK1584 2SK1585 2SK1586 2SK1588
Contextual Info: - 112 - ft f M £ tí: ffl € & m £ A £ 1 % E ft K V * (V) fr fê fr (A) % 3 P d /P c h (max) (A) (W) fö 4# 14 (Ta=25t3) (min) (V) (max) (V) Vd s I gss Vg s (VÏ (min) (A) (max) V d s (A) (V) Id (A) (V) (min) (S) %? Vds (V) 1d (A) 2SK1580 NEC SW MOS

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and