223A7T2 Search Results

se024

Abstract: diode b32 b32 diode
Contextual Info: COLLHER SEMICONDUCTOR I NC 4flE 223A7T2 » D0017M2 SE024 o .95 A 'T o 'V - w Outline Drawings SCHOTTKY BARRIER DIODE • Features m Surface m ount device • Low VF • Super high speed switching. • 6 bT « C O L Connection Diagram High reliability by planer design.

te 1819

Abstract: 2SK1819-01M
Contextual Info: 2SK1819-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET • Features ■ O u tlin e Drawings • Include fast recovery diode • High voltage • Low driving power • Avalanche-proof ■ Applications Gate • M otor controllers

000M5

Abstract: 2SC4538
Contextual Info: Ratings and Characteristics of 2 1. Out 1ine Drawings T0-3PF 2. Absolute Maximum Ratings S 4 5 3 Fuji Power Transistor 8 F ? Tc=25°C Symbol item Maximum Rating Collector-Base Voltage Vceo 9 0 0 Collector-Emitter Voltage V ceo 8 0 0 Emitter-Base Voltage

000M403

Contextual Info: • 22307^2 - — 0004401 I 27b ■ , - SPECI FI CATI ON DEVICE NAME TYPE NAME : SPEC. No. : MS 5 F 3 5 1 i DATE : Jun. -25-1996 1M B H 1 5 D - 1 2 0 Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. D A TE DRAWN NAME

DIODE BZ

Contextual Info: •I 22307^2 □002m,G TET « C O L This Material Copyrighted By Its Respective Manufacturer 1 Eq u ivalent C ir c u it of Module Absolute Maxi huh Ratings 3. Tj =25 TC Ï tenis Syssbol s ~ CL .3 if § là ■ Units V CES 6 0 0 V Gate -em itter voltag e

QQG441A

Abstract: DDD4421
Contextual Info: S P E C 1 F 1 C A T 10 N DEVICE NAME : TYPE NAME : SPEC. Mo. • MS 5 F 3 5 3 1 DATE • Jun. -25-1996 1G B T 1 M B H 2 5 - 1 20 Fuji DATE CH£CK£D E l e c t r i c Co.Ltd. This Specification is subject to change without not ice. NAME APP RO VE D Fuji Electric Ca,Lid.

Contextual Info: 25307^2 Ratings TET «CO L and characteristics □ OOSm.G of Fuji I GBT M B T Module 2 . Equivalent Circuit of Module 3 . Equivalent Ci rcui t -r4CO -OE ~ \/z -D Current Control Ci rcui t ó 4 . Absolute Maxima Ratings ( Tj =25 *C) Items This material and the information herein ¡s the property of

mosfet 2sk

Contextual Info: 2SK1217-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary b reakd ow n • Low driving p ow er • High voltage • V GSs = ± 3 0 V G uarantee

Contextual Info: 1N4933 Thru 1N4937 1 AMP FAST RECOVERY RECTIFIER • FEATURES • • • • • • Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, chlorothene and similar solvents • UL recognized 94V-0 plastic material

t125 switch

Abstract: 251C 600Y cartel
Contextual Info: This matenai and ihe Infoi rvvaik>n herein is the pioperty o í Fu|>Elecmc Co Lid They shatl bo neither reproduced, copied lent. o' disclosed In any way whatsoever or «he use ol arty ihWdpar ry.oor used for the manufacturing purposes w ith o u t the e«press written consent of Fuji Electric Co., Ltd.

ESAC92-03

Abstract: T0220AB esac92
Contextual Info: ESAC92-03 ioa k LOW LOSS SUPER HIGH SPEED RECTIFIER • 4# ^ : F e a tu re s • f tV F Low V F • S '- ' S up er hig h speed s w itc h in g . ■ V lfi& ffi C o n n e c tio n D ia g ra m • 7V — H igh reliability by pla n e r d e sig n . : A p p lic a tio n s

7MBP200RA060

Abstract: TT160
Contextual Info: 7MBP200RA060 IGBT-IPM R series I 600V / 200A 7 in one-package Features • Temperature protection provided by directly detecting the unction temperature of the IGBTs •Low power loss and soft switching ■High performance and high reliability IGBT with overheating protection

6mbp75ra060

Abstract: IGBT FF 300 MTT 95 A 12 N KAE x1 MTT 65 A 12 N 300V power amplifier JT-100
Contextual Info: O U U V /Z O A /O in one-package I G B T - I P M M • *8 R s e r i e s 6MBP75RA060 Features • f e m & t 'j- y • IP M -N '> V- X t 5 & 1 4 0 & -3 A- > >r - v • I G B T * 7 7<D Tj t t U a S f t f t K t t f f i C : J: 5 « • rt $ iJ ® [U K W g S o aQ^ S W * i | i i ^ j ^ l c i

cf 005

Contextual Info: •i 22307^2 □002m,G TET « C O L Powered by ICminer.com Electronic-Library Service CopyRight 2003 1 Equivalent C i r cu it o f Module Absolute Maxi huh Ratings 3. Tj =25 TC Ï tenis Syssbol s ~ CL § là Ratings 6 0 0 V Gate - e m i t t e r v o l t a g e

MB12-140

Abstract: dm445 1009C
Contextual Info: FUJI 1GBT S P E C I F I C A T I O N TYPE NAME : ¿MB12-140 1. Absolute maximum ratings Tc=25‘C Items Symbols maximum ratings Unit VcE 1400 V Gate-Eraitter Voltag e V ge V Continuos 1c 12 A Pulse-50/fS I CP 60 A Power Dissipation +1 C ollector Current

5503 MOSFET

Abstract: 2SK2052 A2292
Contextual Info: 2SK2052 S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - V SER IE S • Outline Drawings ■ Features • Include fast recovery diode • High voltage • Low driving p o w e r ■ Applications • M o to r controllers • Inverters

A1W 73

Abstract: A1W diode 7MBR10NF120 ISA S20 AC2500 INV200
Contextual Info: JU & & & - a a x ^ y f > ^ r N > > » j - X 7MBR10IMF120 j 1200V/10A/PIM • 41# : F e a tu re s '/f V? •^ E E R l High Speed Switching Voltage Drive it Low Inductance Module Structure K ^ U 'v i? • S ' V ■*-* • y ^ 7 ' L ' - + | s | i 6 ^ * # q Converter Diode Bridge Dynamic Brake Circuit

7MBR25SA120 05

Abstract: IGBT 7MBR25SA120 25A 7MBR25SA120 MS6M 144102 es 3305 J 3305 600Y XF MR 50hz
Contextual Info: j. SPECIFICATION D ev ic e Name Power 7MBR25SA120 This material end ih* Information herein il the ptopenv òf Fuji Electnc Co.lld.They shall be neither «produced, copied lent, or disclosed in any way whatsoever for ihe use of any third party.nor used for the manufacturing purposes without