2SC16 Search Results

2SC1627A

Contextual Info: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)

2SC1617

Abstract: npn transistors 300V 0,5a 250V 100MA NPN
Contextual Info: Inchange Semiconductor Product Specification 2SC1617 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage: VCBO min :300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications PINNING(see fig.2)

2SA837

Abstract: 2SC1667
Contextual Info: AOK AOK Semiconductor Product Specification 2SA837 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1667 APPLICATIONS • For radio frequency and power amplifier applications PINNING see Fig.2

2SC1669

Abstract: TO01 package 25T2 2SA839
Contextual Info: AOK AOK Semiconductor Product Specification 2SA839 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1669 • High breakdown voltage APPLICATIONS - • Audio power amplifier applications I /*S> i • Driver stage amplifier applications

2SC1617

Abstract: AC73
Contextual Info: "Sb TOSHIBA { D IS CR ETE/ OP TO! — 9097250 TO SHIBA D ISCR ETE/O PTO 2SC1617 d TI^OTTESO OOD74S1 □ | — y ~‘ 6t>C ' 0 7 ^ 5 1 / D ~ J" 3 3 SILICO N NPN T R IP L E D IFFU S ED TYP E Unit in mm BLACK AND WHITE TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES;

smd transistor marking D17

Abstract: PT-200 2SC1622A
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

500ma 40v pnp

Abstract: 2sA814 datasheet 2SA814 2SA815
Contextual Info: Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

2SC1623 sot-23

Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
Contextual Info: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA

A817A

Abstract: 2SA817A 2SC1627A
Contextual Info: 2SA817A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA817A ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 2SC1627A とコンプリメンタリになります。 • 30~35 W 用アンプのドライバに最適です。

transistor c1627a

Abstract: c1627a transistor c1627a 2SA817A 2SC1627A
Contextual Info: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C)

2SA814

Abstract: 2SA815 2SA815 y 2SC1624
Contextual Info: SavantIC Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

2SC1609

Abstract: TO-3 140V 20A
Contextual Info: SavantIC Semiconductor Product Specification 2SC1609 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching applications PINNING see fig.2 PIN DESCRIPTION

2SC1626

Abstract: 2SA816
Contextual Info: SavantIC Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current

2SA807

Abstract: 2SC1618
Contextual Info: SavantIC Semiconductor Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING see Fig.2

Contextual Info: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

applications of single stage common emitter

Abstract: 2SA817A 2SC1627A
Contextual Info: TOSHIBA 2SA817A 2SA817A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 M A X Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

2SA812K

Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
Contextual Info: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA

2SC1623K

Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
Contextual Info: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

C1984

Abstract: 2SC1623
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ±0.2 +0.1 0.65 –0.15

hFE-200

Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906

npn sot23 l6

Abstract: 2SC1623 marking 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn transistor 6090 hFE CLASSIFICATION Marking
Contextual Info: 2SC1623 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage