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    2SK15 Search Results

    2SK15 Datasheets (500)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK15
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.93KB 1
    2SK15
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 111.2KB 1
    2SK15
    Unknown FET Data Book Scan PDF 194.92KB 4
    2SK15
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 43.47KB 1
    2SK15
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 40.72KB 1
    2SK15
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.51KB 1
    2SK15
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 155.95KB 1
    2SK15
    National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF 83.42KB 1
    2SK15
    Toshiba (2SK11x) N-CHANNEL JFET TRANSISTOR Scan PDF 90.58KB 1
    2SK15
    Toshiba Japanese Transistor Data Book Scan PDF 403.06KB 11
    2SK150
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.94KB 1
    2SK150
    Unknown FET Data Book Scan PDF 92.77KB 2
    2SK150
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 41.12KB 1
    2SK150
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 33.07KB 1
    2SK150
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 165.42KB 1
    2SK150
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.21KB 1
    2SK1500
    NEC Semiconductor Selection Guide 1995 Original PDF 3.25MB 226
    2SK1500
    NEC Semiconductor Selection Guide Original PDF 3MB 399
    2SK1500
    NEC Original PDF 73.44KB 15
    2SK1500
    Unknown FET Data Book Scan PDF 105.25KB 2
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    2SK15 Price and Stock

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    Rochester Electronics LLC 2SK1567-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1567-E Bulk 68
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    Rochester Electronics LLC 2SK1519-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1519-E Bulk 8
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    Renesas Electronics Corporation 2SK1516-E

    NCH POWER MOSFET 500V 10A 900MOH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1516-E Tray 325
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    Renesas Electronics Corporation 2SK1518-E

    MOSFET N-CH 500V 20A TO3P
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    DigiKey 2SK1518-E Tube
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    Avnet Silica 2SK1518-E 28 Weeks 25
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    Chip Stock 2SK1518-E 466
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    Vyrian 2SK1518-E 81
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    Rochester Electronics LLC 2SK1583-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1583-AZ Bulk 740
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    2SK15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


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    2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 PDF

    Contextual Info: T O SH IB A _ 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SIII-5 2 S K 1 5 4 4 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.


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    2SK1544 300/uA PDF

    transistor smd marking NE

    Abstract: transistor smd marking 107 MARKING NE smd marking NE 107 10V smd smd NE 2SK1585
    Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1585 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance 1 RDS on =1.0 MAX.@VGS=4.0V,ID=0.5A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1


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    2SK1585 OT-89 transistor smd marking NE transistor smd marking 107 MARKING NE smd marking NE 107 10V smd smd NE 2SK1585 PDF

    2SK152

    Abstract: 2SK152 Sony 2sk152 equivalent
    Contextual Info: 2SK152 SONY. Silicon N-Channel Junction FET Package Outline Description The 2SK152 is the first device to reach such a high "Figure of merit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­ form very efficiently.


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    2SK152 2SK152 2SK152 Sony 2sk152 equivalent PDF

    Contextual Info: 2SK1578 Ordering number : EN4178B SANYO Semiconductors DATA SHEET 2SK1578 N-channel Junction FET Electret Condenser Microphone Applications Features • • • • Especially suited for use in electret condenser microphone for audio equipments and telephones.


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    2SK1578 EN4178B PDF

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


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    2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10 PDF

    2SK1589

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
    Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1589 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply.


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    2SK1589 OT-23 2SK1589 5V GATE TO SOURCE VOLTAGE MOSFET PDF

    2SJ201

    Abstract: 2SK1530 toshiba pb includes
    Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


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    2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes PDF

    Contextual Info: SMD Type Product specification 2SK1590 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Not necessary to consider driving current because of its high input 1 impedance. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4 3 Features


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    2SK1590 OT-23 PDF

    Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK1584 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance RDS on =2.0 MAX.@VGS=4.0V,ID=0.3A 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1


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    2SK1584 OT-89 PDF

    2SK1521

    Abstract: 2SK1522 Hitachi DSA00108
    Contextual Info: 2SK1521, 2SK1522 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


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    2SK1521, 2SK1522 2SK1521 D-85622 2SK1521 2SK1522 Hitachi DSA00108 PDF

    2SK1544

    Contextual Info: 2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII.5 2SK1544 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current


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    2SK1544 2SK1544 PDF

    Contextual Info: TOSHIBA Discrete Semiconductors 2SK1544 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ji-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance


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    2SK1544 PDF

    Contextual Info: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)


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    2SK1530 2SJ201 2-21F1B O-220SM PDF

    Contextual Info: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.


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    0G23314 2SK1542 15mii 100//A O-220SM Q023b44 PDF

    2SK1506

    Abstract: SC-65 A2216 2SK1506 equivalent
    Contextual Info: 2SK1506 FUJI POWER MOS-FET IJ-CHANNEL SILICON POWER MOS-FET F-III SERIES • Featu res Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier


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    2SK1506 SC-65 VOS-10V A2-216 2SK1506 SC-65 A2216 2SK1506 equivalent PDF

    sk1507

    Abstract: 2sk1507 2sk1507 equivalent 2SK1507-01 VR BH RC
    Contextual Info: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof


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    2SK1507-01 SC-67 00A///s A2-217 sk1507 2sk1507 2sk1507 equivalent VR BH RC PDF

    Contextual Info: 2SK1515, 2SK1516 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode trr =120 ns • Suitable for motor control, switching regulator, DC-DC converter


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    2SK1515, 2SK1516 2SK1515 PDF

    iso 1207

    Abstract: TEA-1035 2SK1596 MEI-1202
    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC 1 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1596 SWITCHING N-CHANNEL POWER MOS FET


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    2SK1596 2SK1596 IEI-1209) iso 1207 TEA-1035 MEI-1202 PDF

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


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    2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390 PDF

    Contextual Info: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。


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    2SJ200 2SK1529 PDF

    A2232

    Abstract: A-2232
    Contextual Info: 2SK1552-01L,S F U JI P O W E R M O S-FET - F-II SERIES _ _ _ _ N-CHAN NEL SILICON POWER MOS-FET • Features ■ Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power


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    2SK1552-01L A2232 A-2232 PDF

    a2231

    Abstract: ups electrical symbols
    Contextual Info: 2SK1549 SIPMOS F U JI POWER M O S -FET N-CHANNEL SILICON POWER MOS-FET _ - F-I SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • Low driving power • High voltage ■ Applications • Switching regulators


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    2SK1549 00A//iS A2-231 a2231 ups electrical symbols PDF

    N CH FET 600V 9A

    Contextual Info: 2SK1507-01M SIPMOS F U JI POWER M O S -FET N-CHANNEL SILICON POWER MOS-FET p • Features g j j £ p |£ g Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V qss = ± 3 0 V Guarantee


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    2SK1507-01M N CH FET 600V 9A PDF