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    ISS226

    Abstract: ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181
    Contextual Info: Sb TOSHIBA íDISCRET E/O PTO> 9097250 '•i, D I S C R E T E / OPTO _ 5bC TOSHIBA Di f1| c] 0 ci 7 e S D 07 103 □□□71D3 D 0 3 - ° ^ .c; . V FET - _ A p plication Typ e Low frequency amplifier Low noise low 2SK 209 frequency amplifier FM R F


    OCR Scan     		1017esdddd71g32sk2082sk30atm+142sk2092sk1172sk2102sk192a2sk2112sk161iss226iss184isv128fet 2sk161low frequency amplifierisv992sk241 mos fetiss181 PDF

    ISS184

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


    Original     		ot-231ss184100maiss184 PDF

    ISS184

    Abstract: MARKING b3 MARKING B3 SOT-23 1SS184
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


    Original     		ot-231ss184100maiss184+2marking b3marking b3 sot-23 PDF