2SK33 Search Results

NS-106

Abstract: 2SK3354 NS 106
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: 2SK3363-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: MOSFET IC Transistors SMD Type Product specification 2SK3366 TO-252 +0.1 0.80-0.1 Low Ciss: Ciss =730 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4 V, ID = 10A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)3 = 43m Unit: mm +0.1 2.30-0.1

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

2SK3373

Contextual Info: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3398

Contextual Info: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)

2SK3310

Contextual Info: 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3310 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)

2SK3371

Abstract: 53-common
Contextual Info: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm 5.2 ± 0.2 Features 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

2SK3310

Abstract: K3310
Contextual Info: 2SK3310 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3310 単位: mm ○ スイッチングレギュレータ用 • : RDS (ON) = 0.48 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.3 S (標準)

2SK3324

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and

d1413

Abstract: 2SK3356 NEC J 302 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3356 TO-3P designed for high current switching applications.

2SK3309

Contextual Info: 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3309 Switching Regulator Applications • · · · Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

dsi 3550

Abstract: dr 25 diode
Contextual Info: T E N T A T IV E T O S H I B A 2SK3389 T OS HI BA F I E L D E F F E C T TRANSI STOR S I L I C O N N CHANNEL MOS T Y P E U - M 0 S 1 I 2 S K 3 3 8 9 INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. _ UNIT:mm M1

Contextual Info: 0001492 115296348 I S/ 4 89 / 00- 06 - 29- 14 :05/ P. 0 0 2 2SK3309 [TENTATIVE T O S H I B A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE /r-MOSV 2SK33O9 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS

Contextual Info: 2SK3397 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O S H 2SK3397 TENTATIVE RELAY DRIVE AND DC-DC CONVERTER APPLICATIONS UNIT : mm MOTOR DRIVE APPLICATIONS ' 4, h H • Low Drain - Source ON Resistance: R d s (ON) = 4.0 mQ ( Typ.)

D14-131

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262 2SK3354-ZJ TO-263

D144

Abstract: 2SK3386 2SK3386-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.

Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

230mH

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings