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Vishay Intertechnologies CRCW04021K50FKED Thick Film Resistors - SMD 1/10 Watt 1.5Kohms 1%
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TTI	CRCW04021K50FKED	Reel	790,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
Vishay Intertechnologies NTCLG100E2104JB NTC Thermistors 100Kohms 5%
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TTI	NTCLG100E2104JB	Bulk			4,000	1 - 10 - 100 - 1000 - 10000 $0.28	Buy Now
Dialight 5615701801F LED Circuit Board Indicators 5MM STAND-OFF 0 600" YEL WC
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TTI	5615701801F	Bulk			475	1 - 10 - 100 - 1000 $1.59 10000 $1.59	Buy Now
Bourns Inc 1140-153K-RC Power Inductors - Leaded 15mH 10%
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TTI	1140-153K-RC	Bulk			140	1 - 10 - 100 - 1000 $7.45 10000 $7.36	Buy Now

K3374 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3374 Abstract: 2SK3374 Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3374 k3374 2SK3374	PDF
k3374 Abstract: 2SK3374 Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •	Original	2SK3374 k3374 2SK3374	PDF
k3374 Abstract: 2SK3374 Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3374 k3374 2SK3374	PDF
k3374 Abstract: 2SK3374 Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.7 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3374 k3374 2SK3374	PDF
k3374 Abstract: 2SK3374 Contextual Info: K3374 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSV K3374 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 4.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 0.8 S (標準)	Original	2SK3374 k3374 2SK3374	PDF
K3374 Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •	Original	2SK3374 to150 K3374	PDF
K3374 Abstract: 2SK3374 Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3374 K3374 2SK3374	PDF
K3374 Abstract: 2SK3374 Contextual Info: K3374 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSV K3374 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 3.7 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 0.7 S (標準)	Original	2SK3374 K3374 2SK3374	PDF