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    Vishay Intertechnologies NTCLG100E2104JB

    NTC Thermistors 100Kohms 5%
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    Bourns Inc 1140-153K-RC

    Power Inductors - Leaded 15mH 10%
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    K3374 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3374 k3374 2SK3374 PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


    Original     		2SK3374 k3374 2SK3374 PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3374 k3374 2SK3374 PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.7 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3374 k3374 2SK3374 PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3374 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 4.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.8 S (標準)


    Original     		2SK3374 k3374 2SK3374 PDF

    K3374

    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


    Original     		2SK3374 to150 K3374 PDF

    K3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3374 K3374 2SK3374 PDF

    K3374

    Abstract: 2SK3374
    Contextual Info: K3374 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3374 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 3.7 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.7 S (標準)


    Original     		2SK3374 K3374 2SK3374 PDF