2SK17 Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

Contextual Info: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SK1725

Contextual Info: 2SK1725 LD L o w D rive S eries V DSs = 3 0 V 2 08 7 N Channel Power M OSFET Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M eets radial taping. b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage

Contextual Info: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage

7842

Contextual Info: 2SK1727 LD L o w D rive S eries V D 2 08 7 60V N Channel Power M OSFET F e a tu re s •Low ON resistance. • V ery high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage

E36J

Contextual Info: 2SK1731 LD L o w D rive S eries VDss = 30V 2085 N Channel Power M OSFET E'36J6 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Its height onboard is 9.5mm. - M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

2SK68

Abstract: 2SK1774 2SK684 10MAVgs
Contextual Info: 4M^b20S 2SK1774 0 0 1 3 5 4^ 344 • H I T 4 HITACHI/COPTOELECTRONICS tiE I Silicon N Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC

2SK1735

Contextual Info: Ordering num ber:EN3830 _ 2SK1735 No.3830 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. ■Its height onboard is 9.5mm. • Meets radial taping.

2SK1737

Contextual Info: Ordering number:EN3 8 3 2 _ 2SK1737 No.3832 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.

2SK1712

Abstract: FM20
Contextual Info: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 6.2 mJ ±60 (Tch ID (pulse) PD EAS * 150ºC)

2SK1728

Contextual Info: Ordering number:EN3823 N-Channel Silicon MOSFET 2SK1728 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1728] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

EN4112

Abstract: 2SK1740 N1593
Contextual Info: Ordering number:EN4112 N-Channel Junction Silicon FET 2SK1740 HF amplifiers low frequency amplifiers analog switches Package Dimensions • Adoption of FBET process. · Largeyfs. · Small Ciss. · Small-sized package permitting 2SK1740-applied sets to be made small and slim.

2SK1761

Abstract: DSA003639
Contextual Info: 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features

Contextual Info: T O SH IB A 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 70 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. • • • • • Recommended for first stages of EQ and M.C. Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ.

2SK1717

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1717 Field Effect Transistor Industrial Applications Silicon N Channel M OSType L2-rt-MOS IV 4.6 MAX. 1.7 MAX. High Speed, High Current DC-DC Converter, - 0 Relay Drive and Motor Drive Applications Unit in mm 1,6 0.4 ±00 5

Contextual Info: 2SK1775 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline

transistor Sh 550

Abstract: 2SK1721
Contextual Info: 2SK1721 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 7 21 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • Unit in mm 10.3M AX. Low Drain-Source ON Resistance : Rd S(ON) —2.50 (Typ.)

2sk1712

Abstract: FM20 8A 820
Contextual Info: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 ±60 (Tch ID (pulse) PD * 150ºC) 6.2 mJ

2SC2812

Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
Contextual Info: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,

2SK1925

Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5

Hitachi DSA002780

Contextual Info: 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3

2SK1750

Abstract: 2SK1750-Z 2SK1751 2SK1751-Z
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC r MOS FIELD EFFECT POWER TRANSISTORS 2SK1750,1750-Z/2SK1751,1751-Z SWITCHING N-CHANNEL POWER MOS FET

2SK170

Abstract: 41lA
Contextual Info: TO SH IBA 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 70 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS . 5.1 M A X. • • Recommended for firststages of EQ and M.C. Head Amplifiers. High |Yfs! : |Yfs! = 22 mS typ.