IRFZ14 Search Results

Contextual Info: IRFZ14_RC, SiHFZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFZ14L

Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)

irfz12

Contextual Info: SAMSUNG ELECTRONICS INC b4 E D 7 ^ 4 1 4 2 0012435 71T • SMGK N-CHANNEL POWER MOSFETS IRFZ14/15 IRFZ10/12 FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRFZ14PBF

Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRFZ14S-L_RC, SiHFZ14S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

c416 diode

Abstract: IRFZ15 IRFZ14 C419
Contextual Info: HE D I MAS54S5 üOGÔbkM T | Data Sheet No. PD-9.507A IN TERNATI ONAL RE C TI FI ER T -3 t - it INTERNATIONAL RECTIFIER T O R AVALANCHE AND dv/dt RATED* 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFZ14 IRFZ15 :r N-CHANNEL Product Summary 60 Volt, 0.20 Ohm HEXFET

IRFZ14

Abstract: SiHFZ14 SiHFZ14-E3 D. S. /N. 1677
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: PD - 94959 IRFZ14PbF • Lead-Free Document Number: 91289 01/29/04 www.vishay.com 1 IRFZ14PbF Document Number: 91289 www.vishay.com 2 IRFZ14PbF Document Number: 91289 www.vishay.com 3 IRFZ14PbF Document Number: 91289 www.vishay.com 4 IRFZ14PbF Document Number: 91289

Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements

AN-994

Abstract: IRFZ14 IRFZ14L IRFZ14S
Contextual Info: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier

irfz14

Contextual Info: IRFZ14 A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ 175°C Operating Temperature

IRFZ14

Abstract: SiHFZ14 SiHFZ14-E3
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements

451 MOSFET

Contextual Info: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: IRFZ14A A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ 175°C Operating Temperature

Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)

Contextual Info: International k » 1Rectifier HEXFET Power MOSFET • • • • • 4655452 0015754 ObO IIN R PD-9.507B IRFZ14 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: PD - 94959 IRFZ14PbF • Lead-Free 1 IRFZ14PbF 2 IRFZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)

Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements

Contextual Info: IRFZ14A A d van ced Power MOSFET FEATURES BVDSS - 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ 175°C Operating Temperature

Contextual Info: PD - 94959 IRFZ14PbF • Lead-Free Document Number: 91289 01/29/04 www.vishay.com 1 IRFZ14PbF Document Number: 91289 www.vishay.com 2 IRFZ14PbF Document Number: 91289 www.vishay.com 3 IRFZ14PbF Document Number: 91289 www.vishay.com 4 IRFZ14PbF Document Number: 91289

Contextual Info: PD - 9.890A International IQ R Rectifier IR F Z 14 S /L HEXFET Power M OSFET Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching V dss = 60V R D S (o n ) Id = = 0 .2 0 ft 10A

Contextual Info: MÛSSMSS D01S7b0 3b4 H I N R International ^R ectifier PD-9.890 IRFZ14S HEXFET Power MOSFET INTERNATIONAL R E C T I F I E R bSE ]> Surface Mount Available in Tape & Reel Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling

IRFZ14S

Abstract: IRL2203 IRLML2803 SC1186 SC1186CSW
Contextual Info: PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER PRELIMINARY - December 2, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1186 combines a synchronous voltage mode controller with two low-dropout linear regulators

icl7071

Abstract: LM317 B1588 lm317 to92 ka3842 equivalent mc3842 ka3842 equivalent uc3842 B1115 LM317 sot23 mc3843a
Contextual Info: MANF. BAY Alpha Semi AS1115 AS1117 AS1580 AS1581 AS1582 AS1583 AS2431 AS2810 AS2815 AS2830 AS2850 AS2880 AS2930 AS2931 AS2950 AS2951 AS431 TL431 AS431C AS432 LP2950 LP2951 B1115 B1117 B1580 B1581 B1582 B1583 B3431 B1117 B1586 B1587 B1585 B1584 LM2930 LM2931