IRFZ10 Search Results

n 332 ab

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

IRFZ10

Contextual Info: PD - 90440A IRFZ10 D G D S TO-220AB Document Number: 90363 G D S Gate Drain Source 06/24/05 www.vishay.com 1 IRFZ10 Document Number: 90363 www.vishay.com 2 IRFZ10 Document Number: 90363 www.vishay.com 3 IRFZ10 Document Number: 90363 www.vishay.com 4 IRFZ10

irfz12

Contextual Info: SAMSUNG ELECTRONICS INC b4 E D 7 ^ 4 1 4 2 0012435 71T • SMGK N-CHANNEL POWER MOSFETS IRFZ14/15 IRFZ10/12 FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: One. «_/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFZ10 HEXFET* Power MOSFET Dynamic dv.'dt Rating 175-C Operating Ternp«ralijr« Fasl Switching Fn=,e rl Pa'alleing Simple Drive Requirements

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: PD - 90440A IRFZ10 D G D S TO-220AB Document Number: 90363 G D S Gate Drain Source 06/24/05 www.vishay.com 1 IRFZ10 Document Number: 90363 www.vishay.com 2 IRFZ10 Document Number: 90363 www.vishay.com 3 IRFZ10 Document Number: 90363 www.vishay.com 4 IRFZ10

IRFZ14

Abstract: IRFZ12 IRFZ10 IRFZ15
Contextual Info: IRFZ14/15 IRFZ10/12 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

IRFZ25

Abstract: IRF512 IRF51 IRFZ42 IRFZ30
Contextual Info: n c A r c International üç»!Rectifier I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current

IRFZ10

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

SSP60N06

Abstract: irf630 irf640 SSP50N06 ssp15n06
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

IRFZ12

Abstract: c409 diode LG 72A diode C407 C408 diode C409
Contextual Info: HE D I MAS5452 GOGflbSfl 3 | Data Sheet No. PD-9.440A INTERNATIONAL RECTIFIER T -tT - o f INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFZ10 IRFZ1S l\l-Channel 5 0 Volt Power MOSFETs Product Summary 50 Volt, 0.2 Ohm HEXFET T0-220AB Plastic Package The H E XFET technology has expanded its product base to

Contextual Info: IRFZ10_RC, SiHFZ10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFZ10

Abstract: SiHFZ10 SiHFZ10-E3 irfz10pbf rating-175
Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Transistor c 4138

Abstract: TIP36 Application Note RFK25 IRF540 p channel
Contextual Info: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178