MAS5452 Search Results

IRFZ12

Abstract: c409 diode LG 72A diode C407 C408 diode C409
Contextual Info: HE D I MAS5452 GOGflbSfl 3 | Data Sheet No. PD-9.440A INTERNATIONAL RECTIFIER T -tT - o f INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFZ10 IRFZ1S l\l-Channel 5 0 Volt Power MOSFETs Product Summary 50 Volt, 0.2 Ohm HEXFET T0-220AB Plastic Package The H E XFET technology has expanded its product base to

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

IRFP460

Abstract: IRFP462 C558 c556 C555 C560 C557
Contextual Info: HE D | 4Û55M52 0GGÔÔÜ4 □ | Data Sheet No. PD-9.512A *r~ IN TER NAT IO NA L R E C T I F I E R INTERNATIONAL RECTIFIER Sf-s.tr IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFEFTRAIVISISTORS IRFP46S N-CHANNEL POWER MQSFETs TO-S47AC PACKAGE 500 Volt, 0.27 Ohm HEXFET

Contextual Info: MASS4S2 0015232 International la g Rectifier PD-9.842 IRFI9Z34G INTERNATIONAL RECTIFIER HEXFET P ow er M O S FE T • • • • • • • 5 m INR Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature

JJS-100

Abstract: D0-205AC P-200A
Contextual Info: 4855452 INTERNATIONAL R E C T I F I E R 02E 07864 IO R l INTERNATIONAL RECTIFIER □H D G 3 ^ / ^ata Sr,eet NO. PL>"Z.U98 DE I MfiSSMSH 00D70b4 1 | R18CF, R18SF, R18CFR AND R18SFR SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIM E 1.25//S 100 AMP AVG STUD MOUNTED

Contextual Info: Bulletin 12776 rev. D 09/97 International I0 R Rectifier P400 SERIES PASSIVATED ASSEM BLED CIRCUIT ELEMENTS Features • Glass passivated junctions for greater reliability ■ Electrically Isolated base plate 40A ■ Available up to 1200 V RHM, VDRM ■ High dynamic characteristics

Contextual Info: PD - 9.1262D International IÜR Rectifier IRF7603 HEXFET^ Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel M O SFET • Very Small SO IC Package • Low Profile < 1.1 mm • Available in Tape & Reel • Fast Switching V d ss = 30 V

Contextual Info: 4fiSS452 001522b bOl • INR International g j i Rectifier HEXFET Power MOSFET • • • • • • • PD-9.841 IR F I 9Z 24 G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature