SIHFZ10 Search Results

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Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

IRFZ10

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10_RC, SiHFZ10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFZ10

Abstract: SiHFZ10 SiHFZ10-E3 irfz10pbf rating-175
Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the