4N10 Search Results

125OC

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR

IRF510

Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power

4n100

Abstract: IXFH4N100Q 4N100Q IXFR4N100Q
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

4N100Q

Abstract: 125OC
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IXFH4N100Q

Abstract: IXFR4N100Q
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V ID25 = 4 A RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IRF510

Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power

125OC

Abstract: 4N100Q
Contextual Info: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V = 4A ID25 RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS

Contextual Info: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V ID25 = 4A RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXFR4N100Q

Abstract: IXFH4N100 ll1000
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 2.8 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

4N100

Contextual Info: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Test Conditions Maximum Ratings VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30

4N100Q

Abstract: 125OC
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings

rockwell collins connector

Abstract: 8040 instruction sheet HF-8040 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10
Contextual Info: 523-076745B-00221A Rockwell International Collins instruction book HF-8040 Antenna Coupler This instruction book includes: 523-0767459 Description HF-804QM Supplement 523-0771398 523-0767460 Installation 523-0767461 Operation 523-0767462 Theory 523-0767463

c151A

Abstract: C273A C342A r133a C327A R227A C337A c347a BC147A C352A
Contextual Info: A INTEL PENTIUM® II/PENTIUM® III PROCESSOR SC242 / INTEL 810e CHIPSET UNIPROCESSOR CUSTOMER REFERENCE SCHEMATICS REVISION 1.0 Title A Page Cover Sheet 1 Block Diagram SC242 Connector 2 Clock Synthesizer 5 82810e Display Cache 6, 7, 8 9 System Memory

Intel L440GX MOTHERBOARD Schematics

Abstract: RP5A WIRING DIAGRAM c151A sio lpc chip intel p4 motherboard 82801 g SCHEMATIC DIAGRAM C379A Intel Mobile Celeron Mendocino intel 80.82 4n606 transistor C388A
Contextual Info: Intel-Based Electronic Classroom Student Computing Station Based on the Intel Celeron Processor and Intel® 810 Chipset Reference Configuration August 2000 Order Number: 273292-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

4435a

Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V

1N100WR-6

Abstract: 4N100WR-30M
Contextual Info: ATTENUATORS up to 4 GHz TYPE N 100 Watts MODELS: XN 1 OOWR — > X N 1 0 0 W R -X X F , XN 1 OOWR — X X Ivi REDUCED SIZE SPECIFICATIONS: Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 3 & 6 d B _ 10 & 20 d B _

Contextual Info: IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS on 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)

4N10L22

Contextual Info: IPG20N10S4L-22 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS on ,max4) 22 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature