SiHFR9022
Abstract: irfu9022 IRFR9022 SiHFR9022-E3 SiHFU9022 SiHFU9022-E3
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single S • • • • • • • Surface Mountable (Order as IRFR9022/SiHFR9022)
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irfr9022irfu9022sihfr9022sihfu9022+7irfr9022/sihfr9022irfu9022/sihfu9022o-252o-25118-jul-08sihfr9022-e3sihfu9022-e3
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SiHFR9022
Abstract: irfu9022 IRFR9022 SiHFR9022-E3 SiHFU9022 SiHFU9022-E3
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9022, SiHFR9022)
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irfr9022irfu9022sihfr9022sihfu9022+4o-251o-252sihfr9022-e3sihfu9022-e3
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SiHFR9022
Abstract: IRFR9022
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9022, SiHFR9022)
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irfr9022irfu9022sihfr9022sihfu9022+22011/65/eu2002/95/ec
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SiHFR9022
Abstract: IRFR9022
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9022, SiHFR9022)
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irfr9022irfu9022sihfr9022sihfu9022+118-jul-08
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SiHFR9022
Abstract: IRFR9022
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9022, SiHFR9022)
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irfr9022irfu9022sihfr9022sihfu9022+2o-251o-252
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SiHFR9022
Abstract: IRFR9022
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9022, SiHFR9022)
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irfr9022irfu9022sihfr9022sihfu9022+111-mar-11
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SiHFR9022
Abstract: IRFR9022
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9022, SiHFR9022)
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irfr9022irfu9022sihfr9022sihfu9022+22011/65/eu2002/95/ec
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in9148
Abstract: MOC301 proximity sensor interfacing with 8051 MOC3021 APPLICATION CIRCUITS K1953 coto 8051 ADT14 ADT14GS N-16 OP295
Contextual Info: a Quad Setpoint, Programmable Temperature Monitor and Controller ADT14 FEATURES Four Programmable Temperature Setpoints Programmable Thermal Hysteresis Accuracy ؎3؇C Typ from –40؇C to +125؇C Temperature Output Scale Factor = 5 mV/K Resistor Programmable Temperature Setpoints
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adt14c306716-leadr-16a+9in9148moc301proximity sensor interfacing with 8051moc3021 application circuitsk1953coto 8051adt14gsn-16op295
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op2976
Abstract: A7812 AD202 4-20ma SSM-2143 c3067 coto 8051 op177 ADT14 ADT14GP N-16
Contextual Info: a Quad Setpoint, Programmable Temperature Monitor and Controller ADT14 FEATURES Four Programmable Temperature Setpoints Programmable Thermal Hysteresis Accuracy ؎3؇C Typ from –40؇C to +125؇C Temperature Output Scale Factor = 5 mV/K Resistor Programmable Temperature Setpoints
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adt1416-leadr-16ac3067+8op2976a7812ad202 4-20massm-2143coto 8051op177adt14gpn-16
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THERMISTOR NTC 100K
Abstract: tip42a 2N7000 "direct replacement"
Contextual Info: U-509 Using the bq2007 Enhanced Features for Fast Charge voltage threshold MCV . To avoid possible premature fast-charge termination when charging batteries after long periods of storage, the bq2007 disables PVD, and -∆V detection during a short “hold-off” period at the start
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u-509bq2007bq200customerthermistor ntc 100k+2tip42a2n7000 "direct replacement
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irc832
Contextual Info: H EXFET Power MOSFETs International S Rectifier H EXSense Current Sensing N-Channel Part Number IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current 2S°C Casa (Amps) >DM Pu'*
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ircz24ircz34ircz44irc531+7irc530irc540irc630irc640irc634irc644irc832
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AD202 4-20ma
Abstract: K1953 in9148 T4 MOC3021 AD654
Contextual Info: BACK a Quad Setpoint, Programmable Temperature Monitor and Controller ADT14 FEATURES Four Programmable Temperature Setpoints Programmable Thermal Hysteresis Accuracy ؎3؇C Typ from –40؇C to +125؇C Temperature Output Scale Factor = 5 mV/K Resistor Programmable Temperature Setpoints
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adt1416-leadr-16aad202 4-20ma+4k1953in9148t4 moc3021ad654
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IRFR012
Abstract: IRFR411
Contextual Info: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120
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r9020
Abstract: 1RFR9020 1RFU9020 Diodo t b 9 g DIODO 42 40 028Q irfr9020 irf r9020 T372S FAG 50 diode
Contextual Info: international RECTIFIER " IN T E R N A T IO N A L r e c t i f i e r IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET* TRANSISTORS P -C H A N N E L -5 0 Volt, 0.20 Ohm HEXFET The HEXFET* technology to the keytoim em ettonel Rectaer'a edvanoed lloe o f power F/OSF6T traneialora. Tbo eWcient
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irfr9020irfr9022irfu9020irfu9022+11t-37-25irfr9020trr90201rfr90201rfu9020diodo t b 9 gdiodo 42 40028qirf r9020t372sfag 50 diode
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IR 9024
Abstract: U9024 FR90 U9020 9025 IRFR9020 irfu9022 UM6264D-70LL ISE Electronics 9024
Contextual Info: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 0ül23bS 57S • SÏ1GK ■ IRFR9020/22/24/25 IRFU9020/22/24/25 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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b414200153b5irfr9020/22/24/25irfu9020/22/24/25+16irfr9020/u9020irfr9022/u9022irfr9024/u9024irfr9025/u9025irfr9020/9022irfr9024/9025ir 9024u9024fr90u90209025irfr9020irfu9022um6264d-70llise electronics9024
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IRF 850 mosfet
Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF
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o-220ir9523irf9522irf9513+16irf9511irf9512irf9510irf9623irf9621irf9622irf 850 mosfetmosfet irf 635mosfet irf 630mosfet irf 713irf n-channel power mosfetsirf 740 nirf 840 mosfetirf 450 mosfetp channel power mosfet irfirf 540 mosfet
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FR 9024
Abstract: FR9024 FR9020 IR 9024 irf9020 FR 9020 LD57A fr9022 9022 diode 57-A
Contextual Info: P-CHANNEL POWER MOSFETS IRFR9020/22/24/25 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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irfr9020/22/24/25irfr9020irfr9022irfr9024+11irfr9025fr 9024fr9024fr9020ir 9024irf9020fr 9020ld57afr90229022 diode57-a
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2n39042n39062n44012n4403+162n50872n50882n55512n6515ksp06ksp10irf9210darlington npn 600v 8a transistorfet 10a 600vdarlington npn 600v 12a transistortransistor irf9640n-ch power mosfet to-92600v 12a to220fnpn transistor 600v 5a to-220transistor irf620ksh117-1
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IC LM317 CIRCUITS
Abstract: PHILIPS ntc 640 197-103LA6-A01 keystone carbon b*137 tco thermistor 78L05 datasheet benchmarq Keystone RL0703-5744-103-S1 philips carbon film resistor
Contextual Info: Using the bq2003 to Control Fast Charge The bq2003 monitors the voltage across the battery to detect -∆V, which is a very reliable charge terminator for NiCd batteries. -∆V detection in the bq2003 may be temporarily disabled during periods when the charge current fluctuates
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bq2003ic lm317 circuitsphilips ntc 640197-103la6-a01+7keystone carbonb*137tco thermistor78l05 datasheetbenchmarqkeystone rl0703-5744-103-s1philips carbon film resistor
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equivalent transistor LM317T
Abstract: Philips 2322-640-63103 ba2003 U1 LM317 ln4148-type 78L05 cv
Contextual Info: BENCHMARQ_ Using the bq2003 to Control Fast Charge Introduction This application note describes the use and functions of the bq2003 gating a current source to fast charge NiCd or NiMH batteries. Examples describe th e ease with which the bq2003 is incorporated into applications.
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bq2003equivalent transistor lm317tphilips 2322-640-63103ba2003+3u1 lm317ln4148-type78l05 cv
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Fenwal NTC
Abstract: philips carbon film resistor BQ2003 Applications HLMP-4700 layout for LM317 keystone carbon thermistor pcb layout for LM317 BQ2003 IRFR9020 Keystone RL0703-5744-103-S1
Contextual Info: U-505 Using the bq2003 to Control Fast Charge The bq2003 monitors the voltage across the battery to detect -∆V, which is a very reliable charge terminator for NiCd batteries. -∆V detection in the bq2003 may be temporarily disabled during periods when the charge current fluctuates
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u-505bq2003fenwal ntcphilips carbon film resistor+7bq2003 applicationshlmp-4700layout for lm317keystone carbon thermistorpcb layout for lm317irfr9020keystone rl0703-5744-103-s1
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IRC540
Abstract: irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E
Contextual Info: THOMSON/ DISTRIBUTOR 5ÖE TCSK D HEXFET Power MOSFETs International S»] Rectifier HEXSense Current Sensing N-Channel Part Number Vq s Drain Source Voltage Volts IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC832 IRC830
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t02tia73ircz24ircz34ircz44+14irc531irc530irc540irc630irc640irc634irfs1z0ircb40irfs1z3irfr9024 hexfetirc832irc840fr9110thomson 58e
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78L05 TO 220
Abstract: bargraph LCD LED BARGRAPH pin configuration 4.5 digits lcd display low bat 78L05 D2 PACK IRF9Z20 IRF9Z22 IRFD9014 IRFD9024 IRFR9010
Contextual Info: Using the bq2007 Enhanced Features for Fast Charge threshold TCO , a safety time-out, and a maximum cell voltage threshold (MCV). To avoid possible premature fast-charge termination when charging batteries after long periods of storage, the bq2007 disables PVD, and
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bq20071n54001n41481n751a+121n58211n400178l05 to 220bargraph lcdled bargraph pin configuration4.5 digits lcd display low bat78l05 d2 packirf9z20irf9z22irfd9014irfd9024irfr9010
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IRF740 "direct replacement"
Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace
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irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120
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