T0252AA Search Results

Contextual Info: 4Ô55452 International i ü Rectifier D G157Gb 30Ô • IN R PD-9.654A IRFR9014 IRFU9014 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9014 Straight Lead (IRFU9014) Available in Tape & Reel

Contextual Info: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching

EM- 546 motor

Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

0C28

Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
Contextual Info: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA'Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common

G3N60B

Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high

Contextual Info: SCHOTTKY BARRIER DIODE 4VQ03CT 4VQ04CT 4VQ03CTF 4VQ04CTF 4.4 A /30— 40V 2.38M A X .094 FEATURES • TO-251AA Case 2.38 M A X (.094) n 0 TO-252AA Case, Surface Mount Device 16-221245) 0.90035) N O M IN A L ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop

Contextual Info: SCHOTTKY BARRIER DIODE 50VQ09 50VQ10 50VQ09F 50VQ10F 5. 5A / 90— 100V TO-2 5 2 A A TO-2 S 1 AA FEATURES 2.38M AX .094 6.71.2641 6.41.2521" 5.351.211) "5.051.199)" ° TO-251AA Case a> °T0-252AA Case Surface Mount Device 2.38M A X (.094) 1.27(.05) M AX

F10P03L

Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac­ tured using the MegaFET process. This process, which uses

Contextual Info: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model

Contextual Info: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)

IRFR210

Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET
Contextual Info: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET

Contextual Info: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V

Contextual Info: jC T jr c RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS semiconductor July 1996 File Number 4075.1 6A, 100V - 200V Ultrafast Dual Diodes Features RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS and RURD620CCS are ultrafast dual diodes

ur420

Contextual Info: RURD420U y / S em iconductor February 1999 Advance Information 3A, 200V Ultrafast Diode File Number Features The RURD420U is an ultrafast diode with soft recovery char­ acteristics trr < 30ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar con­

10J2

Abstract: 1B08S 1B06S 50WF20 10JF1 30WF20F 50WF40F 1B01S 1B02S 1B04S
Contextual Info: SURFACE MOUNTED DEVICES INTERNATIONAL RECTI FIE R 2bE D • INTERNATIONAL RECTIFIER 4ÖS54S5 001GES7 fc. IOR ■ T - ô / -£>3 ~ STANDARD RECOVERY RECTIFIERS Part Number 10J1 10J2 10J4 VfMi 'F AV 0 TC VRRM (V) (A) °C <FM ‘ w IV) too 1.0 1.0 1.0 31 31

75307D

Abstract: 75307P TA75307 HUF75307D3
Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S in t e r s il J u n e !99 9 D a ta S h e e t 15A, 55V, 0.090 Ohm, N-ChanneI UitraFET Power MOSFETs Th ese N-Channel power M O SFETs are manufactured using the File N u m b e r 4 3 5 3 .6 Features • 15A, 55V • Simulation Models

Contextual Info: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,

AN9321

Abstract: AN9322
Contextual Info: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve

50VF10F

Contextual Info: FAST RECOVERY DIODE 50VF10 50VF20 50VF10F 50VF20F 5.5A/100~ 200V/trr : 40nsec 2 .3 8 M A X .094 FEATURES ° TO-251AA Case 2 .3 8 M A X (.094 ) n • TO-252AA Case, Surface Mount Device 0 .9 (0 3 5 ) N O M IN A L 5 .9 8 (2 3 5 ) 1_ ° Ultra - Fast Recovery

Contextual Info: SCHOTTKY BARRIER DIODE 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF 2.2A /30— 40V 2 .38M A X .0 9 4 ’~ 6 .4 (.2 5 2 ) ' , 5 .3 5 1 2 1 1) 1.271.05) MAX r 5 .0 5 U 9 9 ) FEATURES °TO-251AA Case I •T0-252AA Case, Surface Mount Device 2.38M A X (.094) IA n 1

4VQ09CT

Abstract: 4VQ09CTF 4VQ10CT 4VQ10CTF 100V schottky diode
Contextual Info: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4 .4 A / 9 0 ~ 1 0 0 V 6.71264 * 6.4 .252)' ,5-35(.211). 2.38MAX 1.094) FEATURES •TO-251AA Case 2.38MAX (.094) ll.27i.05) Im a x n o TO-252AA Case, Surface Mount Device 6.22Í.245) 5.98Í.235) 0.9Í.035)

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

3n60a4

Abstract: BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S HGT1S3N60A4S9A
Contextual Info: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 in te r r ii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT 4825 Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and

diode F 82 bp

Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Contextual Info: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip