IRFU210 Search Results

EIA-541

Abstract: IRFR120 IRFU120 U120 rectifier diode assembly irf p channel
Contextual Info: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF

IRFU210

Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210
Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8

AN-994

Abstract: IRFR210 IRFU210
Contextual Info: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling

Device Code SE

Abstract: EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL
Contextual Info: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U210PbF 2 www.irf.com IRFR/U210PbF www.irf.com 3 IRFR/U210PbF 4 www.irf.com IRFR/U210PbF www.irf.com 5 IRFR/U210PbF 6 www.irf.com IRFR/U210PbF Peak Diode Recovery dv/dt Test Circuit

u210

Abstract: xrd6 irfr210 N-Channel Power MOSFETs IRFR211
Contextual Info: IRFR210/211 IRFU210/211 N-CHANNEL POWER MOSFETS FEATURES D -P A K • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRFR210

Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET
Contextual Info: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET

TO-251AA

Abstract: ipak
Contextual Info: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current

Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)

IRFR210

Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210
Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8

Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating

IRFR210B

Abstract: IRFU210B
Contextual Info: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF

IRFU210A

Contextual Info: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRFR210

Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210
Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8

IRFR210TRPBF

Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)

U-212

Abstract: IRFR122 u212
Contextual Info: IRFR210/212 IRFU210/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating

IRFR210TRPBF

Abstract: IRFU21 91344
Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)

IRFR210B

Abstract: IRFU210B
Contextual Info: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

1RFR210

Contextual Info: International [»3 Rectifier GST • IN R MÖSSHS2 D ü lS b b 4 PD-9.526C IRFR210 IRFU210 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

samsung

Abstract: 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020
Contextual Info: - f ± ft Vd s or ? Vd g t s £ tt « £ Vg s rTS fê Ta;:25°C Id * /CH Pd ft m. V g s th) Id s s Ig s s min * /CH (nA) Vg s (V) max Id Vd s (m a ) (V) Vd s = Vg s (V) (V) 4# te Id (oii) D s (o n ) Ciss g fs Coss Crss Vg s =0 (max) *typ Vg s ( 0 ) (V) Id

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)