U210 Search Results

Contextual Info: MXC LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS MXC SERIES 105℃ Standard, Snap-in Terminal Type ◆FEATURES ・Load Life : 105℃ 3000 hours. ・RoHS compliance. ◆SPECIFICATIONS Items Characteristics Category Temperature Range −40~＋105℃ −25∼＋105℃

ic 277

Abstract: 2SC4056 ITO-220 transistor Ic 4A NPN
Contextual Info: Inchange Semiconductor Product Specification 2SC4056 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol Absolute maximum ratings(Ta=25℃)

RF POWER TRANSISTOR NPN

Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃

2sd2581

Abstract: 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

12v 100w amplifier

Abstract: 12v to Amplifier 100w 100w 12v POWER AMPLIFIER 2SA877 SILICON PNP POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA877 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for power amplifier and general purpose

2SB1015

Abstract: 2sB1015 y 2SD1406
Contextual Info: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

vbe 10v, vce 500v NPN Transistor

Abstract: High voltage ignition coil driver vce 500v NPN Transistor BU941T ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN DARLINGTON 10A 500V ignition coil driver
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941T DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL

2N3441

Contextual Info: Inchange Semiconductor Product Specification 2N3441 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as:

2SC3163

Contextual Info: Inchange Semiconductor Product Specification 2SC3163 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25℃

2SA808

Abstract: 2SA80
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA808 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for general purpose applications.

BFQ540

Abstract: RF POWER TRANSISTOR NPN RF TRANSISTOR
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ540 DESCRIPTION •High Gain ·High Output Voltage ·Low Noise APPLICATIONS ·Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER

HIR-C06

Abstract: L298* application
Contextual Info: Technical Data Sheet High Power Infrared LED HIR-C06/L298-P01/TR Features ․Small package with high efficiency ․Peak wavelength λp=850nm ․Soldering methods:SMT ․Thermal resistance junction to lead : 40℃/W. ․Moisture Sensitivity Level: 1 ․Pb free

elna capacitor

Abstract: elna capacitor dynacap elna kouhokuku elna are
Contextual Info: ve tati n e T Electrical Double Layer Capacitor DYNACAP DVS-series For Re-flow Soldering ED-2203e-2 Features ● Size: Φ12.5x8.5 mm, compatible with surface mounting and low ESR. ● High temperature tolerant -25 to +85℃ and highly reliable. ● Unlike batteries, safe and high reliability without containing active and

VRBG5614S

Abstract: VRBG5614 5614S
Contextual Info: 5614S Series Bi-color φ5 Round Shape Type Features Bi-color φ5 Round shape type, Milky White Diffused epoxy Package Product features ・Outer Dimension φ5 Round shape type ・Operation temperature range. Storage Temperature :-30℃～100℃ Operating Temperature

Contextual Info: OX12/OX14 series Oven Controlled Crystal Oscillators BOWEI INTEGRATED CIRCUITS CO.,LTD. Features ● Small size, low power consumption ≤500mW@25℃ steady ● Fast warm-up，within ±1ppm in 10s within ±0.1ppm in 100s ● Hermetical metal package Pin function

Contextual Info: Data Sheet SLR-332 Series Features ・Viewing angle 2θ 1/2 : 85° Color Type V D Y M Specifications Viewing angle 2θ 1/2 / 85 : Standard Chip Structure Part No. • SLR-332VC Absolute Maximum Ratings Ta＝25℃ Electrical and Optical Characteristics (Ta＝25℃)

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125℃ Operation SPI BUS EEPROM BR35Hxxx-WC 16K 32K 64K 128K ●General Description BR35Hxxx-WC is a SPI BUS interface method serial EEPROM. ●Features „ High speed clock operation up to 5MHz(Max.) „ 2.5V to 5.5V single power source operation most suitable for

BU12SD2MG-M

Contextual Info: Datasheet CMOS LDO Regulators for Automotive Equipments 1ch 200mA CMOS LDO Regulators BUxxSD2-M series ●Key Specifications „ Input Power Supply Voltage Range: 1.7V to 6.0V „ Output Current Range: 0 to 200mA „ Operating Temperature Range: -40℃ to +105℃

GXA Series

Abstract: fxa2
Contextual Info: SCREW TERMINAL TYPE ALUMINUM ELECTROLYTIC CAPACITORS New Option Service: Charge-Discharge Charge-Discharge option available series • Conform RoHS Type of series FXA FX2 FXR HXA GXA GX2 GXR Features Temperature range −40℃~85℃ −40℃∼105℃ • Suited to high frequency Charge-Discharge for AC servomoter,

Contextual Info: HE395B/HEM395B Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 14 Features 12 10 Frequency Range: 10～1500MHz l Active Bias Design Supply Temperature Compensation l Standard Hermetic Package

Contextual Info: HE383B-3L/HEM383B-3L Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 17 Features 15 13 Frequency Range: 20～600MHz l Low Noise: 1.0dB(Typ) l Active Bias Design Supply Temperature Compensation

IN6005

Contextual Info: HE381B/HEM381B/HES381B Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 13 Features 12 Frequency Range: 20～500MHz l Active Bias Design Supply Temperature Compensation l Standard l Hermetic Package

Contextual Info: DRVCO-14000 Microwave Dielectric Resonator Oscillator BOWEI INTEGRATED CIRCUITS CO.,LTD. Electrical Specification TA=25℃ Unit Parameter Frequency range MHz Tuning voltage Min Typ Max Test condition - 14000 - 1 - MHz/V - 2.0 Power output dBm 10 Output power vibration

Contextual Info: Data Sheet SPR-54 Series Features ・Viewing angle 2θ 1/2 : 45 Color Type M V Specifications Viewing angle 2θ 1/2 / 45 : Standard Chip Structure Part No. • ■ SPR-54MVW Absolute Maximum Ratings Ta＝25℃ Electrical and Optical Characteristics (Ta＝25℃)