TA09922 Search Results

AN9321

Abstract: AN9322
Contextual Info: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve

AN9321

Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving

AN7254

Abstract: AN7260 AN9321 AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A F3N08L
Contextual Info: RFD3N08L, RFD3N08LSM S E M I C O N D U C T O R 3A, 80V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3A, 80V TO-251AA SOURCE DRAIN GATE • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model

Contextual Info: Hormis S RFD3N08L, RFD3N08LSM Semiconductor y 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 3A, 80V • UIS Rating Curve The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors

AN9322

Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors

AN9321

Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Intersil application notes
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2836.4 • 3A, 80V • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve