115NS Search Results

WPB4002

Abstract: SC-65 PB4002 A1769
Contextual Info: WPB4002 Ordering number : ENA1769 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET WPB4002 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=115ns typ Input capacitance Ciss=2200pF (typ) • • ON-resistance RDS(on)=0.28Ω (typ)

Contextual Info: Ordering number : ENA1769A WPB4002 N-Channel Power MOSFET http://onsemi.com 600V, 23A, 0.36Ω, TO-3P-3L Features • • • Reverse recovery time trr=115ns typ Input capacitance Ciss=2200pF (typ) ON-resistance RDS(on)=0.28Ω (typ) 10V drive • TO-3P-3L

Contextual Info: WPB4002 Ordering number : ENA1769 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET WPB4002 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=115ns typ Input capacitance Ciss=2200pF (typ) • • ON-resistance RDS(on)=0.28Ω (typ)

Contextual Info: WPB4002 Ordering number : ENA1769 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET WPB4002 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=115ns typ Input capacitance Ciss=2200pF (typ) • • ON-resistance RDS(on)=0.28Ω (typ)

MX23L6422

Abstract: MX23L6422MC-11 MX23L6422MC-12 70pin-SSOP
Contextual Info: Introduction MX23L6422 64M-BIT Mask ROM 8/16 Bit Output FEATURES ORDER INFORMATION • Bit organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) • Fast access time - Random access: 115ns (max.) - Page access: 35ns (max.) • Page Size - 8 double words per page

TO-3PB SANYO

Abstract: A1769 WPB4002 IT15684
Contextual Info: WPB4002 注文コード No. N A 1 7 6 9 三洋半導体データシート N WPB4002 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 逆回復時間 trr=115ns typ ・ 入力容量 Ciss=2200pF(typ)

Contextual Info: m ftJ C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _MX23L6422 64M -BIT M ask ROM 8/16 Bit Output FEATURES ORDER INFORMATION • Bit organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) • Fast access time - Random access: 115ns (max.) - Page access: 35ns (max.)

HALF ADDER USING IC 7400

Abstract: 25S05 X3232
Contextual Info: SOSSZUIV Am25S05 Four-Bit by Two-Bit Two's Complement Multiplier DISTINCTIVE CH A R AC TER ISTIC S Multiplies two 1 2 -bit signed numbers in typically 115ns. Multiplies in active HIGH positive logic or active LOW (negative logic) representations. Reduced input loading as compared to Am2505.

PL7223

Abstract: CIRCUIT DIGRAM 012HJ1C TRW 012HJ1C MPY012H 23/25C640-I/P
Contextual Info: MPY012H T R V t Multiplier 12x12 Bit, 115ns The M P Y 0 12 H is a h i g h -s p e e d 1 2 x 1 2 b it p a ra lle l m u ltip lie r w h i c h o p e r a t e s a t a 1 1 5 n s c y c le t im e 8 .7 M H z m u ltip lic a tio n ra te . T h e m u ltip lic a n d a n d t h e m u ltip lie r

Contextual Info: MX23L6422 64M -BIT M ask ROM 8/16 Bit Output FEATURES ORDER INFORMATION • Bit organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) • Fast access time - Random access: 115ns (max.) - Page access: 35ns (max.) • Page Size - 8 double words per page

TC518128B

Abstract: TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 TC5181
Contextual Info: TOSHIBA T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W 1 V B F IL -7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P iy B S P L /B F V B F W L /B F H r 7 0 iy 8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes

transistor D128

Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Contextual Info: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes

4430B

Abstract: 256x128x8
Contextual Info: |Ordering number : EN4430B] CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single S V power supply and is organized as 32768 words x 8 bits. By using memory

TC511632

Abstract: TC511632FL
Contextual Info: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

LC33832M

Abstract: LC33832P LC33832S
Contextual Info: IOrdering number : EN4430B| CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words x 8 bits. By using memory

ED-4701

Abstract: ISL54054 ISL54054IRUZ-T ISL54055 ISL54055IRUZ-T TB363 NX DIODE
Contextual Info: ISL54054, ISL54055 Data Sheet March 21, 2007 Ultra Low ON-Resistance, Low Voltage, Single Supply, Single SPST/1:2 Distribution Analog Switch The Intersil ISL54054 and ISL54055 devices consist of low ON-resistance, low voltage, bi-directional SPST analog

AO117

Abstract: 1DM6 LC33832M LC33832P LC33832S LC33832
Contextual Info: Ordering number : EN4430B CMOS LSI _ LC33832P, S, M, PL, SL, ML-70/80/10 SA\YO 256 K 32768 words x 8 bits Pseudo-SRAM ''X Overview Package Dimensions The LC33832 scries is com posed o f pseudo static RAM that o p e ra te s on a s in g le 5 V p o w e r su p p ly an d is

Contextual Info: TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS P R E L IM IN A R Y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The T C 5 1 8 1 2 9 C is a 1 M bit high speed C M O S pse udo static RAM organized as 131,072 w o rd s by 8 bits. T h e T C 5 1 8 1 2 9 C utilizes

Contextual Info: Version 1.4 2007 Features ƒ ƒ PEX 8525 General Features o 24-lane PCI Express switch - Integrated SerDes o Up to five configurable ports x1, x2, x4, x8, x16 o 23mm x 23mm, 484-ball PBGA package o 31mm x31mm, 644-ball PBGA package o Typical Power: 2.6 Watts

a26 sot23-5

Contextual Info: MIC914 Micrel MIC914 160MHz Low-Power SOT-23-5 Op Amp Final Information General Description Features The MIC914 is a high-speed operational amplifier with a gainbandwidth product of 160MHz. The part is unity gain stable provided its output is loaded with at least 200Ω. It has a very

MT28F256J3

Abstract: intel marking 28f
Contextual Info: 256Mb, 128Mb, 64Mb, 32Mb Q-FLASH MEMORY  MT28F256J3‡, MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • Two hundred fifty-six 128KB erase blocks 256Mb • One hundred twenty-eight 128KB erase blocks

S0123

Abstract: 4x4 bit multipliers Am2505 amd 2500 multiplier diagram K217 32x32 Multiplier 7400 fan-out S01-23 Am25LS557 Am25S05
Contextual Info: Am25S05 Am25S05 Four-Bit by Tw o-Bit T w o 's C om plem ent Multiplier DISTINCTIVE CHARACTERISTICS Multiplies M ultiplies negative Reduced Provides 2 's com plem ent m ultiplication a t high speed w ithout correction. Can be used in a com binatorial array or in a time

2SK1796

Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
Contextual Info: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id