FR9110
Abstract: FR91 1RFR9020 Samsung D-PAK IRFR9022 IRFR9120 IRFR9121 IRFR9210 IRFR9212
Contextual Info: - mA SÜ £ it % i £ fg Ta=25t> Vd s or Vd g Vg s (V) (V) Id Pd * /CH * /CH (A) m E& Vg s th) Id s s Igss Vg s (V) (H A ) Vd s (V) (V) (V) Id (mA) (max) *typ V g s ( 0 ) (V) SAMSUNG SAMSUNG P P -50 -50 0. 28 0. 33 1RFR9110 IRFR9111 1RFR9120 IRFR9121 IRFR9210
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1RFR9020
IRFR9022
FR9110
1RFR9111
IRFR9120
IRFR-247
IRFS150
O-247
IRFS151
FR91
Samsung
D-PAK
IRFR9121
IRFR9210
IRFR9212
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s276
Abstract: fr9110 PLIC 9110
Contextual Info: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)
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IRFU9110,
IRFR9110
-251A
-200i
23e-14
74e-2
95e-3
30e-6
72e-10
45e-7)
s276
fr9110
PLIC
9110
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IRFR9110
Abstract: IRFU9110 AN-994 PN 1204 1RFR9110
Contextual Info: PD-9.519E International S Rectifier IRFR9110 IRFU9110 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9110 Straight Lead (IRFU9110) Available in Tape & Reel P-Channel Fast Switching V DSS = - 1 0 0 V ^D S (on ) - 1
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IRFR9110
IRFR9110)
IRFU9110)
IRFU9110
IRFR9110
IRFU9110
AN-994
PN 1204
1RFR9110
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pj 87 diode
Abstract: diode pj 87 IRFU9110 AN-994 IRFR9110
Contextual Info: PD-9.519E International 5 ü Rectifier IRFR9110 IRFU9110 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount {IRFR9110 Straight Lead IRFU9110) Available in Tape & Reel P-Channel Fast Switching V DSS = -100V
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IRFR9110
1RFR9110)
IRFU9110)
IRFU9110
pj 87 diode
diode pj 87
AN-994
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