IRFU9110 Search Results

IRFR9110

Abstract: irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227
Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power

IRFR9110

Abstract: IRFU9110 SiHFR9110 SiHFR9110-E3
Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK

IF9110

Abstract: IRFR9110 2-03E6 TA17541 irfu9110
Contextual Info: IRFU9110, IRFR9110 ¡31 H a r r i s mu S E M I C O N D U C T O R m “ * m w j mm mm m mw r m m w 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1 A, 100V SOURCE • r DS ON = 1 -2 0 0 i i

Contextual Info: IRFU9110 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)3.4 I(DM) Max. (A) Pulsed I(D)2.4 @Temp (øC)100# IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)-55õ

Diode P 619

Abstract: EIA-541 IRFR120 IRFU120 U120 marking code diode 14
Contextual Info: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U9110PbF 2 www.irf.com IRFR/U9110PbF www.irf.com 3 IRFR/U9110PbF 4 www.irf.com IRFR/U9110PbF www.irf.com 5 IRFR/U9110PbF 6 www.irf.com IRFR/U9110PbF Peak Diode Recovery dv/dt Test Circuit

*FR9110

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110)

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free Document Number: 91279 12/14/04 www.vishay.com 1 IRFR/U9110PbF Document Number: 91279 www.vishay.com 2 IRFR/U9110PbF Document Number: 91279 www.vishay.com 3 IRFR/U9110PbF Document Number: 91279 www.vishay.com

IRF 9110

Abstract: FR9110 FU9110 IRFR9111
Contextual Info: HE INTERNATIONAL RECTIFIER D | MÖS5452 QQQÖ324 7 | Data Sheet No. PD-9.519B T-37-25 IOR INTERNATIONAL- RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9110 IRFRS111 IRFU9110 IRFU9111 P -C H A N N E L Product Summary -100 Volt, 1.2 Ohm HEXFET

s276

Abstract: fr9110 PLIC 9110
Contextual Info: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)

100V 60A Mosfet

Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Contextual Info: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .

irfu9220

Abstract: irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334
Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110)

IRFR9110

Abstract: IRFU9110 AN-994 PN 1204 1RFR9110
Contextual Info: PD-9.519E International S Rectifier IRFR9110 IRFU9110 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9110 Straight Lead (IRFU9110) Available in Tape & Reel P-Channel Fast Switching V DSS = - 1 0 0 V ^D S (on ) - 1

Contextual Info: IRFR9110/9111 IRFU9110/9111 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

TO-252AA Package

Abstract: eia marking code IRFR120 252AA EIA-541 IRFU120 EIA-481 international rectifier code TO252AA
Contextual Info: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free 1 IRFR/U9110PbF 2 IRFR/U9110PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S

IF9110

Contextual Info: & IRFU9110, IRFR9110 3.1 A, 100V, A valanche Rated, P-Channel E nhancem ent-M ode Pow er MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1A, 100V ■ r DS<ON SOURCE = 1-200Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

SiHFU9110-GE3

Abstract: SiHFR9110-GE3 SiHFR9110TRL-GE3 IRFR9110 IRFU9110 SiHFR9110 SiHFR9110-E3 SIHFU9110 19-AB
Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110)

RS507

Abstract: irfu9220 IRFR9110 IRFR91109A IRFU9110 TA17541 TB334 TC227
Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power

Contextual Info: PD - 95324 IRFR9110PbF IRFU9110PbF • Lead-Free www.irf.com 1 6/1/04 IRFR/U9110PbF 2 www.irf.com IRFR/U9110PbF www.irf.com 3 IRFR/U9110PbF 4 www.irf.com IRFR/U9110PbF www.irf.com 5 IRFR/U9110PbF 6 www.irf.com IRFR/U9110PbF D-Pak TO-252AA Package Outline

pj 87 diode

Abstract: diode pj 87 IRFU9110 AN-994 IRFR9110
Contextual Info: PD-9.519E International 5 ü Rectifier IRFR9110 IRFU9110 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount {IRFR9110 Straight Lead IRFU9110) Available in Tape & Reel P-Channel Fast Switching V DSS = -100V

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110)