TO252AA Search Results

F16N06

Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Contextual Info: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

IRFR120

Abstract: IRFU120 TB334
Contextual Info: [ /Title IRFR 120, IRFU1 20 /Subject (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO251AA , TO252AA IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel

TC227

Contextual Info: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs

TO-252AA Mechanical dimensions

Abstract: VS-50WQ04
Contextual Info: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition

100 20L A1 diode

Abstract: SQD30N05-20L-GE3
Contextual Info: SQD30N05-20L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)

Contextual Info: SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-252 TrenchFET Power MOSFET Package with Low Thermal Resistance

sud35n10

Contextual Info: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Q503

Contextual Info: VS-12CWQ03FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 2 Common

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120)

Contextual Info: VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode

IRFR320PBF

Abstract: IRFR320TRL
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)

IRLR110

Contextual Info: IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR110, SiHLR110) • Straight Lead (IRLU110, SiHLU110)

sud40n10-25-e3

Contextual Info: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

Contextual Info: VS-12CWQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition 2 Common

SCR 30A 400V

Abstract: JESD22-A101 JESD22-A102 TO-251AA Package S6006 S6006RS2
Contextual Info: Teccor brand Thyristors 6 Amp Sensitive & Standard SCRs Sxx06xSx & Sxx06x Series ® Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps

ah30 diode

Abstract: AH34 mosfet ak24 diode thermistor M33 irf7832 ISL62882 n34 transistor w8 mosfet transistor c36 Burndy y34 lug specifications
Contextual Info: ISL62882EVAL2Z User Guide Application Note April 9, 2009 AN1461.0 Author: Jia Wei Introduction Interface Connections The ISL62882EVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5

Contextual Info: FS1209.D STANDARD SCR On-State Current 12 Amp TO-252AA DPAK 2 2 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES • Glass/passivated die junctions • Medium current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

Contextual Info: FS08.D STANDARD SCR On-State Current 8 Amp TO-252AA DPAK 2 0.5 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES • Glass/passivated die junctions • Medium current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

Contextual Info: FT04.D HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 4 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-252AA DPAK FEATURES • Glass/passivated die junctions • Medium current Triac • Low thermal resistance • Ideal for automated placement

mosfet 4684

Abstract: C2022 1N4148 HIP6020 HIP6020EVAL1 HIP6021 HIP6021EVAL1 pentium 4 atx power supply diagram Integrated Circuit PWM ATX T68-52A
Contextual Info: Motherboard Power Conversion Solutions Using the HIP6020 and HIP6021 Controller ICs Application Note Introduction The rapidly changing desktop motherboard architecture for core processor and Accelerated Graphics Port AGP voltages demand innovative power conversion solutions.

d8p05

Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

8EWS12S

Abstract: AN-994
Contextual Info: 8EWS.SPbF High Voltage Series Vishay High Power Products Surface Mountable Input Rectifier Diode, 8 A DESCRIPTION/FEATURES Base cathode 4, 2 D-PAK 1 Anode The 8EWS.SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

marking code H1a

Abstract: AUIRLR3105TR AUIRLR3105 12-00-16c
Contextual Info: PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET Advanced Planar Technology l Logic-Level Gate Drive l Dynamic dV/dT Rating l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed

GE Refrigerator Compressor

Abstract: 400v 20A ultra fast recovery diode 2245-2
Contextual Info: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode