16N06 Search Results
16N06 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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16N06 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
16N06LE | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
16N06LESM | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
16N06LESM9A | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
16N06SM | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 |
16N06 Price and Stock
Infineon Technologies AG BSC016N06NSTATMA1MOSFET N-CH 60V 31A/100A TDSON |
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BSC016N06NSTATMA1 | Cut Tape | 12,577 | 1 |
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BSC016N06NSTATMA1 | 18,650 |
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BSC016N06NSTATMA1 | Cut Tape | 8,550 | 0 Weeks, 1 Days | 1 |
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BSC016N06NSTATMA1 | 27 Weeks | 5,000 |
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BSC016N06NSTATMA1 | 18,780 |
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Infineon Technologies AG BSC016N06NSSCATMA1TRENCH 40<-<100V PG-WSON-8 |
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BSC016N06NSSCATMA1 | Cut Tape | 1,922 | 1 |
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BSC016N06NSSCATMA1 | 19 Weeks | 4,000 |
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onsemi NVMFD016N06CT1GMOSFET 2N-CH 60V 9A 8DFN |
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NVMFD016N06CT1G | Digi-Reel | 1,500 | 1 |
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NVMFD016N06CT1G | 1,460 |
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NVMFD016N06CT1G | 1 |
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NVMFD016N06CT1G | 1,500 |
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NVMFD016N06CT1G | 15 Weeks | 1,500 |
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NVMFD016N06CT1G | 16 Weeks | 1,500 |
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NVMFD016N06CT1G | 4,500 |
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onsemi NVMFWD016N06CT1GMOSFET 2N-CH 60V 9A 8DFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFWD016N06CT1G | Digi-Reel | 1,500 | 1 |
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NVMFWD016N06CT1G | 1,500 |
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NVMFWD016N06CT1G | 15 Weeks | 1,500 |
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NVMFWD016N06CT1G | 16 Weeks | 1,500 |
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NVMFWD016N06CT1G | 15,000 |
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onsemi NVTFS016N06CTAGMOSFET N-CH 60V 8A/32A 8WDFN |
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NVTFS016N06CTAG | Cut Tape | 700 | 1 |
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NVTFS016N06CTAG | Reel | 1,500 | 14 Weeks | 1,500 |
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NVTFS016N06CTAG | 6,824 |
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NVTFS016N06CTAG | 1 |
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NVTFS016N06CTAG | 1 |
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NVTFS016N06CTAG | 1,500 |
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NVTFS016N06CTAG | 15 Weeks | 1,500 |
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NVTFS016N06CTAG | 16 Weeks | 1,500 |
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NVTFS016N06CTAG | 7,500 |
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16N06 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 16N06LE, 16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives |
OCR Scan |
RFD16N06LE, RFD16N06LESM | |
16n06l
Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
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RFD16N06LE, RFD16N06LESM 16n06l 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027 | |
Contextual Info: 16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum |
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RFD16N06LESM | |
Contextual Info: 16N06LESM October 2013 Data Sheet N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives |
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RFD16N06LESM RFD16N06LESM | |
16n06l
Abstract: pspice model for ttl
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OCR Scan |
RFD16N06LE RFD16N06LESM O-251 h1994 O-252AA RFD16N06LESM 6756e-4 425e-7 59e-10 16n06l pspice model for ttl | |
16N06
Abstract: RFD16N06
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RFD16N06LE, RFD16N06LESM TB334 16N06 RFD16N06 | |
16n06l
Abstract: 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334
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RFD16N06LE, RFD16N06LESM 16n06l 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 | |
16n06leContextual Info: 16N06LE, 16N06LESM in t e f s il D ata S h e e t 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum |
OCR Scan |
RFD16N06LE, RFD16N06LESM AN7254 AN7260. 16n06le | |
16n06l
Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
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RFD16N06LESM 16n06l AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334 |