TA49027 Search Results

Contextual Info: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

16n06l

Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
Contextual Info: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

Contextual Info: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

0n06

Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE
Contextual Info: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic

F30N06LE

Abstract: RFP30N06LE MOSFET 38E-3 TA49027 F30N06L RF1S30N06LESM RFP30N06LE 1S30N06L AN7254 RF1S30N06LE
Contextual Info: RFP30N06LE, RF1S30N06LE, RF1S30N06LESM S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB • 30A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • 2kV ESD Protected

Contextual Info: RFD16N06LESM October 2013 Data Sheet N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

p30N06LE

Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
Contextual Info: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN

16n06l

Abstract: pspice model for ttl
Contextual Info: m W HARRIS S E M I C O N D U C T O R March1994 RFD16N06LE RFD16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected

16N06

Abstract: RFD16N06
Contextual Info: RFD16N06LE, RFD16N06LESM Data Sheet Title FD1 06L D16 6LE M bt A, V, 47 m, gic vel, anwer OSTs) utho October 1999 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes

0N06L

Abstract: RFP30N06
Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

30N06LE

Abstract: 30n06l s1am 30n06 F30N06LE
Contextual Info: fT| HARRIS RFP30N06LE, RF1S30N06LE, S E ",O N O U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs J u ly 1 9 9 5 Features Packages JE D EC T 0 -2 2 0 A B • 3 0 A ,6 0 V • r D S O N | =

F30N06LE

Abstract: TA49027
Contextual Info: in te r« ! RFP30N06LE, RF1S30N06LESM D ata S h e e t 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

P30N06L

Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

16n06le

Contextual Info: RFD16N06LE, RFD16N06LESM in t e f s il D ata S h e e t 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

P30N06

Abstract: p30n06le P30N06L RFP30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A TB334
Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

F30N06LE

Abstract: AN9321 RF1S30N06LESM RF1S30N06LESM9A RFP30N06LE TB334 F30N06L 1S30N06L
Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: RFP30N06LE, RF1S30N06LESM Semiconductor April 1999 Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

16n06l

Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
Contextual Info: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum