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Dynapar HS20102475337PS ENCODER, INCREMENTAL, OPTICAL, HOLLOWSHAFT, SIZE 20, 1/2" DIF BD 5-26V/5V 10P+MT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	HS20102475337PS	Bulk		12 Weeks	1	1 $605.00 10 $573.00 100 $573.00 1000 $573.00 10000 $573.00	Get Quote
Harris Semiconductor HUF75337P3 MOSFET N-Channel 55V 75A (Tc) TO-220-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HUF75337P3		2,600		1	1 - 10 - 100 $0.29 1000 $0.24 10000 $0.21	Buy Now

75337P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
75337 Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334 Contextual Info: HUFA75337G3, 75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75337g3 hufa75337p3 hufa75337s3s 75337 +375337p hufa75337s3st tb334	PDF
75337P Abstract: 75337 HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 75337S 358e9 Contextual Info: HUF75337G3, 75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75337g3 huf75337p3 huf75337s3s 75337p +575337 huf75337s3st tb334 75337s 358e9	PDF
Contextual Info: HUFA75337G3, 75337P3, HUFA75337S3S TM Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75337g3 hufa75337p3 hufa75337s3s	PDF
HUFA75337G3 Abstract: 75337P HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334 Contextual Info: HUFA75337G3, 75337P3, HUFA75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75337g3 hufa75337p3 hufa75337s3s 75337p +2hufa75337s3st tb334	PDF
75337P Abstract: 77e-1 75337 HUF75337 75337S HUF75337P3 HUF75337S3S HUF75337S3ST TB334 HUF75337G3 Contextual Info: HUF75337G3, 75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75337g3 huf75337p3 huf75337s3s 75337p +677e-1 75337 huf75337 75337s huf75337s3st tb334	PDF
rr180 Abstract: 75337 75337S 75337P Contextual Info: in te rrii HUF75337G3, 75337P3, HUF75337S3S J u n e 1999 D a ta S h e e t 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75337g3 huf75337p3 huf75337s3s an7260 +4rr180 75337 75337s 75337p	PDF
Contextual Info: HUF75337G3, 75337P3, HUF75337S3, HUF75337S3S Semiconductor Data Sheet 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75337g3 huf75337p3 huf75337s3 huf75337s3s +1o-263ab	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
huf75337g3 Abstract: 75337S Contextual Info: HUF75337G3, 75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery	OCR Scan	huf75337g3 huf75337p3 huf75337s3 huf75337s3s +3tb334 1-800-4-harris 75337s	PDF
75337S Abstract: HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334 Contextual Info: HUF75337G3, 75337P3, HUF75337S3, HUF75337S3S S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V • Ultra Low On-Resistance, rDS ON = 0.014Ω • Diode Exhibits Both High Speed and Soft Recovery	Original	huf75337g3 huf75337p3 huf75337s3 huf75337s3s +5tb334 1-800-4-harris 75337s 75337p huf75337s3st	PDF
Contextual Info: HUF75337G3, 75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75337g3 huf75337p3 huf75337s3s huf75337	PDF
75337 Abstract: 75337P HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 64e2 Contextual Info: HUF75337G3, 75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75337g3 huf75337p3 huf75337s3s 43ucts +575337 75337p huf75337s3st tb334 64e2	PDF
75337P Abstract: ta75337 Contextual Info: interrii HUF75337G3, 75337P3, HUF75337S3S Data S heet Ju n e 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75337g3 huf75337p3 huf75337s3s an7254 +3an7260 75337p ta75337	PDF