30N06 Search Results
30N06 Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 30N06 | Unisonic Technologies | 30 Amps, 60 Volts N-CHANNEL POWER MOSFET | Original | 154.83KB | 8 | ||
| 30N06LE | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.6KB | 1 | ||
| 30N06L-TA3-T | Unisonic Technologies | 30 Amps, 60 Volts N-CHANNEL POWER MOSFET | Original | 154.82KB | 8 | ||
| 30N06-TA3-T | Unisonic Technologies | 30 Amps, 60 Volts N-CHANNEL POWER MOSFET | Original | 154.82KB | 8 | ||
| 30N06-TF3-T | Unisonic Technologies | 30 Amps, 60 Volts N-CHANNEL POWER MOSFET | Original | 154.82KB | 8 | ||
JMTP330N06D
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 5A, 32mΩ N-channel Power Trench MOSFET in SOP-8 package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications. | Original | ||||
AKZE30N06
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AK Semiconductor | N-Channel 60-V TrenchFET Power MOSFET with 35 A continuous drain current, 0.025 ohm typical rDS(on) at VGS = 10 V, TO-252 package, rated for 175 °C junction temperature. | Original | ||||
JMTK330N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 20A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 33mΩ at VGS=10V and 45mΩ at VGS=4.5V, featuring advanced trench technology for low gate charge and high efficiency in power management applications. | Original | ||||
SL30N06D
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SLKOR | Original |
30N06 Price and Stock
ROHM Semiconductor RSR030N06TLMOSFET N-CH 60V 3A TSMT3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RSR030N06TL | Digi-Reel | 58,796 |
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RSR030N06TL | Reel | 9,000 | 3,000 |
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RSR030N06TL | 100 | 1 |
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RSR030N06TL | 16 Weeks | 3,000 |
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RSR030N06TL | 17,900 |
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Taiwan Semiconductor TSM230N06PQ56-RLGMOSFET N-CH 60V 44A 8PDFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM230N06PQ56-RLG | Digi-Reel | 5,680 | 1 |
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Goford Semiconductor G130N06S2MOSFET 2N-CH 60V 9A 8SOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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G130N06S2 | Cut Tape | 3,701 | 1 |
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onsemi NVMFD030N06CT1GMOSFET 2N-CH 60V 7A 8DFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFD030N06CT1G | Digi-Reel | 1,500 | 1 |
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NVMFD030N06CT1G | Reel | 17 Weeks | 1,500 |
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NVMFD030N06CT1G | 1,500 |
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NVMFD030N06CT1G | 18 Weeks | 1,500 |
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NVMFD030N06CT1G | 200,000 |
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NVMFD030N06CT1G | 19 Weeks | 1,500 |
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NVMFD030N06CT1G | 24,000 |
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Goford Semiconductor G130N06MN60V, 90A,RD<12M@10V,VTH1.0V~2.4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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G130N06M | Digi-Reel | 780 | 1 |
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30N06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
30N06L-TA3-T
Abstract: 30N06 mosfet to-220f 60v
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Original |
30N06 O-252 30N06 O-220 O-220F QW-R502-087 30N06L-TA3-T mosfet to-220f 60v | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche |
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30N06 30N06 QW-R502-087 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche |
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30N06V-Q 30N06V-Q 30N06VL-TM3-T 30N06VG-TM3-T O-251 QW-R502-A29. | |
30N06L-TA3-T
Abstract: 30n06l UTC 30N06 30N06 30N06-TA3-T 30N06-TF3-T
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30N06 O-220 30N06 O-220F QW-R502-087 30N06L-TA3-T 30n06l UTC 30N06 30N06-TA3-T 30N06-TF3-T | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06-Q 60V, 30A N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche |
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30N06-Q O-220F O-220 30N06-Q QW-R502-979. | |
UTC 30N06
Abstract: 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T
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30N06 30N06 30N06L QW-R502-087 UTC 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 60V, 30A N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche |
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30N06 O-220F O-220 30N06 QW-R502-087 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche |
Original |
30N06 O-252 30N06 O-220 O-22at QW-R502-087 | |
NTB30N06
Abstract: NTB30N06G NTB30N06T4 NTB30N06T4G NTP30N06 30N06
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NTP30N06, NTB30N06 O-220 tpv10 NTP30N06/D NTB30N06 NTB30N06G NTB30N06T4 NTB30N06T4G NTP30N06 30N06 | |
toy helicopter remote control circuit diagram
Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
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B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter | |
optimos battery protection reverse
Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
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FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package | |
TLE7201
Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
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B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519 | |
30N06LE
Abstract: 30n06l s1am 30n06 F30N06LE
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OCR Scan |
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM -262A RF1S30N06LE RF1S30N06LESM 576e-4 591e-9 1e-30 30N06LE 30n06l s1am 30n06 F30N06LE | |
30N06
Abstract: NTP30N06LG 30n06l
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NTP30N06L, NTB30N06L O-220 tpv10 NTP30N06L/D 30N06 NTP30N06LG 30n06l | |
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
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B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 | |
bts 2106
Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
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B112-H6731-G8-X-7600 bts 2106 bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL | |
BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
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B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 | |
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Contextual Info: 30N06L, 30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 30 AMPERES, 60 VOLTS |
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NTP30N06L, NTB30N06L NTP30N06L/D | |