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    119N03S Search Results

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    Infineon Technologies AG BSO119N03S

    Trans MOSFET N-CH 30V 9A 8-Pin DSO
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    Bristol Electronics BSO119N03S 1,354
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    Rochester Electronics BSO119N03S 744 1
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    • 1000 $0.32
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    Component Electronics, Inc BSO119N03S 5,026
    • 1 $0.77
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    • 100 $0.58
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    Vyrian BSO119N03S 7,284
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    Infineon Technologies AG BSC119N03SG

    IN STOCK SHIP TODAY
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    Component Electronics, Inc BSC119N03SG 24
    • 1 $1.54
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    NXP Semiconductors BSC119N03SG

    Power Field-Effect Transistor, 11.9A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Vyrian BSC119N03SG 13,170
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    119N03S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    119n03s

    Abstract: MOSFET 50 V, 30 A BSC119N03S JESD22 119N03
    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


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    bsc119n03s119n03smosfet 50 v, 30 ajesd22+1119n03 PDF

    119N03S

    Abstract: 119N03
    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original
    bsc119n03s119n03s119n03 PDF

    119n03s

    Abstract: 119N03 GS806 gs 34 qg
    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original
    bsc119n03s119n03s119n03gs806+1gs 34 qg PDF

    119n03s

    Abstract: BSC119N03S G BSC119N03S JESD22 119n0 119N03
    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original
    bsc119n03sq7042s4292119n03s+4bsc119n03s gjesd22119n0119n03 PDF

    119N03S

    Abstract: 119n03 119n0 BSC119N03S IEC61249-2-21 JESD22 GS8030
    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS R DS on ,max • Optimized technology for notebook DC/DC converters ID • Qualified according to JEDEC1) for target applications 30 11.9 30 V mΩ A


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    bsc119n03siec61249-2-21119n03s119n03+3119n0jesd22gs8030 PDF

    119N03

    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original
    bsc119n03sq7042s4292119n03s+1119n03 PDF

    119N03

    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original
    bsc119n03sq7042s4292119n03s+1119n03 PDF

    C3 DIODE

    Abstract: 119N03
    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original
    bsc119n03s119n03sc3 diode119n03 PDF

    119n03s

    Abstract: BSC119N03S JESD22 119N03
    Contextual Info: 119N03S G OptiMOS 2 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for notebook DC/DC converters 11.9 ID 30 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original
    bsc119n03sq7042s4292119n03s+2jesd22119n03 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF