OPTIMOS Search Results

2N06L35

Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2n0404

Contextual Info: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N06L30

Abstract: IPD25N06S4L-30 4N06L
Contextual Info: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

2N03L05

Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05
Contextual Info: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 5 mΩ ID 80 A P-TO263-3-2 • Low on-resistance RDS(on) P-TO220-3-1 • Excellent Gate Charge x RDS(on) product (FOM)

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

Contextual Info: Product specification BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101

H6327

Contextual Info: Product specification BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101

BSO200N03S

Abstract: JESD22 Q67042-S4212 200N3
Contextual Info: BSO200N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 20 mΩ ID 8.8 A 1 • Qualified according to JEDEC for target applications • N-channel

13n03la

Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
Contextual Info: IPD13N03LA IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level

P-TO252

Abstract: 04N03 04N03LA IPF04N03LA P-TO252-3-11
Contextual Info: IPF04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 4.1 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

07n03l

Abstract: smd DIODE code marking 20A DIODE 07n03l 07N03 transistor 07N03L IPB07N03L IPP07N03L IPB07N03L SMD smd code diode 20a 246 smd code
Contextual Info: IPP07N03L IPB07N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 5.9 m
ID 80 A P-TO263-3-2

IEC612

Abstract: 058N03M IEC61249-2-21 JESD22
Contextual Info: BSZ058N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL V DS R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5 mΩ V GS=4.5 V 6.4 ID

SMD DIODE 615 200A

Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
Contextual Info: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m
ID 80 A P-TO263-3-2 Type

BSO301SN

Abstract: 301SN
Contextual Info: BSO301SN Preliminary data OptiMOS
=Small-Signal-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 V RDS(on) 7.8 m ID 13 A
Superior thermal resistance 150°C operating temperature

64CN10N

Abstract: JESD22
Contextual Info: IPD64CN10N G IPU64CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 64 mΩ ID 17 A • Very low on-resistance R DS(on) • 175 °C operating temperature

065N06L

Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated

05N03LA

Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID

PN04L03

Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

20n025s

Abstract: BSC020N025S JESD22
Contextual Info: BSC020N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • N-channel V DS 25 V R DS on ,max 2.0 mΩ ID 100 A • Logic level • Qualified according to JEDEC1 for target applications • Excellent gate charge x R DS(on) product (FOM)

42n03s

Abstract: 42n03 BSC042N03S JESD22
Contextual Info: BSC042N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 4.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel

BSO4822

Contextual Info: BSO4822 Preliminary data OptiMOS
=Small-Signal-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching applications

32n03

Abstract: 32N03S BSC032N03S JESD22
Contextual Info: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

120N06N

Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature