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    Infineon Technologies AG

    Infineon Technologies AG IPD64CN10NG

    Power Field-Effect Transistor, 17A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    Vyrian IPD64CN10NG 210
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    64CN10N Datasheets Context Search

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    64CN10N

    Abstract: JESD22
    Contextual Info: 64CN10N G 64CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 64 mΩ ID 17 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    ipd64cn10nipu64cn10npg-to252-3pg-to251-3+264cn10njesd22 PDF

    64CN10N

    Abstract: IPD64CN10NG JESD22 D1504
    Contextual Info: 64CN10N G 64CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 64 mΩ ID 17 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    ipd64cn10nipu64cn10npg-to252-3pg-to251-3+464cn10nipd64cn10ngjesd22d1504 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF