2N06L Search Results

2N06L35

Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N06L06

Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
Contextual Info: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated

2N06L11

Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code

2N06L05

Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
Contextual Info: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1

2n06l07

Abstract: SPB80N06S2L-07 SPP80N06S2L-07 BSPB80N06S2L-07
Contextual Info: SPP80N06S2L-07 SPB80N06S2L-07 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 7 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated

2N06LH5

Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

2n06l23

Contextual Info: SPD30N06S2L-23 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 23 mΩ ID 30 A • Enhancement mode • Logic Level • 175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type Package

2n06l23

Contextual Info: SPD30N06S2L-23 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 55 V R DS on 23 m
ID 30 A P- TO252 -3-11
175°C operating temperature
Avalanche rated
dv/dt rated Type SPD30N06S2L-23 Package Ordering Code

2N06LH5

Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

2N06L11

Abstract: TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104
Contextual Info: IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V DS 55 V • N-channel Logic Level - Enhancement mode R DS on ,max (SMD version) 10.7 mW • Automotive AEC Q101 qualified ID 80 A • MSL1 up to 260°C peak reflow

2n06l23

Abstract: ANPS071E IPD30N06S2L-23 PG-TO252-3-11 SMD MARKING g5
Contextual Info: IPD30N06S2L-23 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 23 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

Contextual Info: IPG20N06S2L-65A OptiMOS Power-Transistor Product Summary VDS 55 V RDS on ,max3) 65 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N06LH5

Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055

2N06L05

Abstract: 2N06L SPB80N06S2L-05 SPP80N06S2L-05 SMD MARKING CODE M 4 Diode
Contextual Info: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P-TO263-3-2 •=175°C operating temperature 55 V 4.5 mΩ 80 A P-TO220-3-1

2N06L23

Abstract: P-TO252 Q67060-S7410 SPD30N06S2L-23 2N06
Contextual Info: Preliminary data SPD30N06S2L-23 OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V RDS on 23 mΩ ID 30 A P-TO252 •=175°C operating temperature • Avalanche rated • dv/dt rated Type Package

DIODE smd marking 52A

Abstract: SPB80N06S2L-09 SPP80N06S2L-09 2N06L09
Contextual Info: SPP80N06S2L-09 SPB80N06S2L-09 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 8.5 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated

2n06l09

Abstract: SPB80N06S2L-11 SPP80N06S2L-11 2N06L
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 11 m
ID 80 A P-TO263-3-2 Type Package

smd marking code G16

Abstract: 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008
Contextual Info: IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N06L35

Abstract: 68w smd transistor 2N06L35 BSPD26N06S2L-35 SPD26N06S2L-35 smd 68w INFINEON PART MARKING to252 68w diode
Contextual Info: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 35 mΩ ID 30 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD26N06S2L-35

smd diode marking 69a

Abstract: DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120
Contextual Info: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.3 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated

2n06l05

Abstract: 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.5 mΩ ID 80 A • Logic Level • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1

2N06L09

Abstract: D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09
Contextual Info: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 8.5 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated

2N06L50

Abstract: diode c25 IPG20N06S2L-50 PG-TDSON-8-4
Contextual Info: IPG20N06S2L-50 OptiMOS Power-Transistor Product Summary V DS 55 V R DS on ,max4) 50 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

2n06l35

Abstract: transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a
Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature