DIODE smd marking 52A
Abstract: SPB80N06S2L-09 SPP80N06S2L-09 2N06L09
Contextual Info: SPP80N06S2L-09 SPB80N06S2L-09 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 8.5 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated
|
Original
|
spp80n06s2l-09spb80n06s2l-09p-to263-3-2p-to220-3-1+3q67060-s60312n06l09diode smd marking 52a
|
PDF
|
2n06l09
Abstract: SPB80N06S2L-11 SPP80N06S2L-11 2N06L
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 55 RDS on 11 m ID 80 A P-TO263-3-2 Type Package
|
Original
|
spp80n06s2l-11spb80n06s2l-11p-to263-3-2p-to220-3-1+3q67060-s60352n06l092n06l
|
PDF
|
2N06L09
Abstract: D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09
Contextual Info: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 8.5 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated
|
Original
|
spp80n06s2l-09spb80n06s2l-09q67060-s60312n06l09+6q67060-s6032bspp80n06s2l-09bspb80n06s2l-09d52asmd transistor code marking 8kanps071e
|
PDF
|
SMD MARKING CODE g23
Abstract: 2N06L09 ANPS071E IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 smd marking g23 smd diode UM 09
Contextual Info: IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
ipb80n06s2l-09ipp80n06s2l-09pg-to263-3-2pg-to220-3-1+6sp0002-187432n06l09smd marking code g23anps071esmd marking g23smd diode um 09
|
PDF
|
2N06L09
Abstract: diode 57 fs100a DIODE smd marking 52A SMD MARKING CODE g23
Contextual Info: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 R DS on 8.5 m ID 80 A P- TO263 -3-2 175°C operating temperature V P- TO220 -3-1 Avalanche rated dv/dt rated Type SPP80N06S2L-09
|
Original
|
spp80n06s2l-09spb80n06s2l-09q67060-s6031q67060-s6032+72n06l09bspp80n06s2l-09bspb80n06s2l-09diode 57fs100adiode smd marking 52asmd marking code g23
|
PDF
|
2N06L09
Abstract: INFINEON PART MARKING smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09 Q67060-S6031
Contextual Info: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 8.5 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated
|
Original
|
spp80n06s2l-09spb80n06s2l-09q67060-s6031q67060-s6032+62n06l09bspp80n06s2l-09bspb80n06s2l-09infineon part markingsmd transistor code marking 8kanps071e
|
PDF
|