2N06L05
Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
Contextual Info: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1
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spp80n06s2l-05spb80n06s2l-05p-to263-3-2p-to220-3-1+4q67040-s42462n06l05infineon part marking402vgs
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2N06L05
Abstract: 2N06L SPB80N06S2L-05 SPP80N06S2L-05 SMD MARKING CODE M 4 Diode
Contextual Info: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P-TO263-3-2 •=175°C operating temperature 55 V 4.5 mΩ 80 A P-TO220-3-1
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spp80n06s2l-05spb80n06s2l-05p-to263-3-2p-to220-3-1+4q67040-s42462n06l052n06lsmd marking code m 4 diode
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2n06l05
Abstract: 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.5 mΩ ID 80 A • Logic Level • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1
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spi80n06s2l-05spp80n06s2l-05spb80n06s2l-05q67040-s4246+5q67040-s42562n06l05q67060-s74222n06lanps071e
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2n06l05
Abstract: Q67060-S7422 200nC
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel RDS on Enhancement mode ID Logic Level P- TO262 -3-1 Avalanche rated max. SMD version P- TO263 -3-2 V 4.5 m 80 A P- TO220 -3-1 dv/dt rated
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spi80n06s2l-05spp80n06s2l-05spb80n06s2l-05q67040-s4246+4q67040-s4256q67060-s74222n06l05200nc
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2n06l05
Abstract: SMD CODE G13 IPP80N06S2L-05 2N06 IPB80N06S2L-05 IPI80N06S2L-05 PG-TO263-3-2
Contextual Info: IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow
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ipb80n06s2l-05ipi80n06s2l-05ipp80n06s2l-05pg-to263-3-2+6pg-to220-3-1pg-to262-3-1sp0002-190042n06l05smd code g132n06
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2N06L05
Abstract: SPB80N06S2L-05 SPP80N06S2L-05
Contextual Info: Preliminary data SPP80N06S2L-05 SPB80N06S2L-05 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 4.8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated
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spp80n06s2l-05spb80n06s2l-05p-to220-3-1q67040-s4246+32n06l05p-to263-3-2q67040-s4256
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2n06l05
Abstract: ANPS071E SPB80N06S2L-05 SPI80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated P- TO262 -3-1 VDS 55 RDS on max. SMD version 4.5 m ID 80 A P- TO263 -3-2 Type Package
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spi80n06s2l-05spp80n06s2l-05spb80n06s2l-05q67040-s4246+32n06l05q67040-s4256anps071e
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