IPI80N06S2L-11 Search Results
IPI80N06S2L-11 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IPI80N06S2L-11 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 11.0 mOhm; ID (max): 80.0 A; RthJC (max): 0.95 K/W; | Original | 157.99KB | 8 | ||
IPI80N06S2L11AKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO262-3 | Original | 130.7KB | |||
IPI80N06S2L11AKSA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO262-3 | Original | 135.9KB |
IPI80N06S2L-11 Price and Stock
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Infineon Technologies AG IPI80N06S2L11AKSA1MOSFET N-CH 55V 80A TO262-3 |
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IPI80N06S2L11AKSA1 | Tube |
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IPI80N06S2L11AKSA1 | 2,601 |
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Rochester Electronics LLC IPI80N06S2L11AKSA2MOSFET N-CH 55V 80A TO262-3 |
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IPI80N06S2L11AKSA2 | Bulk | 258 |
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Infineon Technologies AG IPI80N06S2L11AKSA2Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-262 Tube Automotive AEC-Q101 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI80N06S2L11AKSA2 | 20,000 | 268 |
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IPI80N06S2L11AKSA2 | 40,954 | 1 |
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