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    IPB80N06S2L-06 Search Results

    IPB80N06S2L-06 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB80N06S2L-06
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.0 mOhm; ID (max): 80.0 A; RthJC (max): 0.6 K/W; Original PDF 155.95KB 8
    IPB80N06S2L06ATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 151.91KB
    IPB80N06S2L06ATMA2
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 156.98KB
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    IPB80N06S2L-06 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB80N06S2L06ATMA2

    MOSFET N-CH 55V 80A TO263-3
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    Avnet Americas IPB80N06S2L06ATMA2 Tape & Reel 9 Weeks 1,000
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    IPB80N06S2L06ATMA2 1,000 21
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    IPB80N06S2L06ATMA2 944 233
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    Rochester Electronics IPB80N06S2L06ATMA2 944 1
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    Infineon Technologies AG IPB80N06S2L06ATMA1

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey IPB80N06S2L06ATMA1 Tape & Reel
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    Vyrian IPB80N06S2L06ATMA1 7,436
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    Infineon Technologies AG IPB80N06S2L-06

    POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.0084OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IPB80N06S2L-06 350
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