04N03 Search Results

P-TO252

Abstract: 04N03 04N03LA IPF04N03LA P-TO252-3-11
Contextual Info: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 4.1 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

04N03L

Abstract: 04n03 IPB04N03L IPP04N03L Q67042-S4107
Contextual Info: 04N03L 04N03L Preliminary data OptiMOS
Buck converter series Product Summary Feature  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 3.9 m
ID 80 A
Superior thermal resistance P-TO263-3-2 V

04n03l

Abstract: TO252-3 IPD04N03LB PG-TO252-3-11 PG-TO252 IPU04N03LB
Contextual Info: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level

04N03LA

Abstract: Q67042-S4177 IPD04N03LA P-TO252-3-11
Contextual Info: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 3.8 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

IPI04N03LA

Abstract: diode kv 1236 IPP04N03LA
Contextual Info: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

diode kv 1236

Contextual Info: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

04N03L

Abstract: 04N03LA
Contextual Info: 04N03LA 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mW ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

04n03

Abstract: 04N03LA
Contextual Info: OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ

04N03LA

Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
Contextual Info: Type OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

04n03la

Abstract: 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177
Contextual Info: OptiMOS 2 Power-Transistor 04N03LA 04N03LA 04N03LA 04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A

04N03L

Abstract: Q67042-S4181 marking code br 39 SMD
Contextual Info: 04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

IPS04N03LA G

Abstract: max5199
Contextual Info: OptiMOS 2 Power-Transistor 04N03LA 04N03LA 04N03LA 04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A

04N03

Abstract: sse04n03
Contextual Info: 04N03 80 A, 25 V, RDS ON 5 mΩ N-Channel Logic Level Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-220 The 04N03 provide the designer with the best combination of fast switching, ruggedized device design,

04n03la

Abstract: IPB04N03LA smd diode marking 77 JESD22 diode kv 1236
Contextual Info: 04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

IPB04N03LB

Abstract: JESD22 A10080
Contextual Info: 04N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.5 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: 04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers

to220 pcb footprint

Abstract: to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3
Contextual Info: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS 25 V • Ideal for high-frequency dc/dc converters R DS on ,max 4.2 m: ID 80 A • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

04N03LA

Abstract: IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING
Contextual Info: 04N03LA 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

IPP04N03LB

Abstract: JESD22
Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

DS24A

Abstract: 04N03D PJ04N03d
Contextual Info: 04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers

Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 3.8 m: ID 80 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

IPP04N03LB

Abstract: JESD22 04N03LB
Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)