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    04N03LB Search Results

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    04N03LB Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD04N03LBG

    MOSFET N-Channel 30V 50A (Tc) TO-252-3 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPD04N03LBG 2,500 1
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    • 100 $0.83
    • 1000 $0.69
    • 10000 $0.61
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    Infineon Technologies AG IPP04N03LBG

    Power Field-Effect Transistor, 80A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPP04N03LBG 4,792
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    Infineon Technologies AG IPB04N03LB

    Power Field-Effect Transistor, 80A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB04N03LB 4,514
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    04N03LB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    04n03l

    Abstract: TO252-3 IPD04N03LB PG-TO252-3-11 PG-TO252 IPU04N03LB
    Contextual Info: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level


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    ipd04n03lbipu04n03lbips04n03lbipf04n03lb+5pg-to252-3-11pg-to251-3-1104n03lto252-3pg-to252 PDF

    Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    ipp04n03lbpg-to220-3-1q67045-a503404n03lb PDF

    IPB04N03LB

    Abstract: JESD22 A10080
    Contextual Info: 04N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.5 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    ipb04n03lbpg-to263-3pg-to220-3-1p-to263-3+304n03lbjesd22a10080 PDF

    IPP04N03LB

    Abstract: JESD22
    Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    ipp04n03lbpg-to220-3-104n03lbjesd22 PDF

    Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 3.8 m: ID 80 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    ipp04n03lbpg-to220-304n03lb PDF

    IPP04N03LB

    Abstract: JESD22 04N03LB
    Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    ipp04n03lbpg-to220-3-104n03lbjesd22 PDF

    04N03

    Abstract: PG-TO252-3-11 04n03l IPD04N03LB IPU04N03LB PG-TO252-3-23
    Contextual Info: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level


    Original
    ipd04n03lbipu04n03lbips04n03lbipf04n03lb+5pg-to252-3-11pg-to251-3-1104n0304n03lpg-to252-3-23 PDF

    04N03LB

    Contextual Info: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level


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    ipd04n03lbipu04n03lbips04n03lbipf04n03lb+3pg-to252-3-11q67042-s426104n03lb PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    4261s

    Abstract: IPD04N03LB JESD22 PG-TO252-3-11 P-TO252-3-11
    Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipd04n03lbpg-to252-3-11p-to252-3-11q67042-4261s+304n03lb4261sjesd22 PDF

    Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    ipp04n03lbpg-to220-3-104n03lb PDF

    Contextual Info: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level


    Original
    ipd04n03lbipu04n03lbips04n03lbipf04n03lb+2pg-to252-3-11pg-to251-3-11 PDF

    D55 MARKING CODE SMD

    Abstract: IPB04N03LB
    Contextual Info: 04N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.5 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    ipb04n03lbp-to263-3pg-to220-3-1q67045-a5031+204n03lbd55 marking code smd PDF