04N03LB Search Results
04N03LB Price and Stock
Infineon Technologies AG IPD04N03LBGMOSFET N-Channel 30V 50A (Tc) TO-252-3 T/R |
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IPD04N03LBG | 2,500 | 1 |
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Infineon Technologies AG IPP04N03LBGPower Field-Effect Transistor, 80A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP04N03LBG | 4,792 |
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Infineon Technologies AG IPB04N03LBPower Field-Effect Transistor, 80A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB04N03LB | 4,514 |
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04N03LB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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04n03l
Abstract: TO252-3 IPD04N03LB PG-TO252-3-11 PG-TO252 IPU04N03LB
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ipd04n03lbipu04n03lbips04n03lbipf04n03lb+5 | |
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Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) |
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ipp04n03lbpg-to220-3-1q67045-a503404n03lb | |
IPB04N03LB
Abstract: JESD22 A10080
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ipb04n03lbpg-to263-3pg-to220-3-1p-to263-3+3 | |
IPP04N03LB
Abstract: JESD22
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ipp04n03lbpg-to220-3-104n03lbjesd22 | |
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Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 3.8 m: ID 80 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) |
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ipp04n03lbpg-to220-304n03lb | |
IPP04N03LB
Abstract: JESD22 04N03LB
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ipp04n03lbpg-to220-3-104n03lbjesd22 | |
04N03
Abstract: PG-TO252-3-11 04n03l IPD04N03LB IPU04N03LB PG-TO252-3-23
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ipd04n03lbipu04n03lbips04n03lbipf04n03lb+5 | |
04N03LBContextual Info: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level |
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ipd04n03lbipu04n03lbips04n03lbipf04n03lb+3 | |
PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
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b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13 | |
BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
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b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10 | |
4261s
Abstract: IPD04N03LB JESD22 PG-TO252-3-11 P-TO252-3-11
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ipd04n03lbpg-to252-3-11p-to252-3-11q67042-4261s+3 | |
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Contextual Info: 04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) |
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ipp04n03lbpg-to220-3-104n03lb | |
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Contextual Info: OptiMOS 2 Power-Transistor 04N03LB G 04N03LB G 04N03LB G 04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level |
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ipd04n03lbipu04n03lbips04n03lbipf04n03lb+2 | |
D55 MARKING CODE SMD
Abstract: IPB04N03LB
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ipb04n03lbp-to263-3pg-to220-3-1q67045-a5031+2 |