13N03 Search Results

13n03la

Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
Contextual Info: 13N03LA 13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level

Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

13n03la

Abstract: IPD13N03LAG
Contextual Info: OptiMOS 2 Power-Transistor 13N03LA G 13N03LA G 13N03LA G 13N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 12.8 mΩ ID 30 A • N-channel, logic level

mosfet 09n03la

Abstract: mosfet 06N03LA 2N3904 M5 09N03LA C3312 13n03la 06n03la D1N4148 m7 MOSFET SC2677BEVB-1
Contextual Info: SC2677B Dual Synchronous Voltage Mode Controller with Current Sharing Circuitry POWER MANAGEMENT Description Features The SC2677B is a versatile 2 phase, synchronous, voltage mode PWM controller that can be used in two distinct ways. First, the SC2677B is ideal for applications

JESD22

Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

13N03LA

Abstract: IPF13N03LA 13n03l
Contextual Info: 13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13.3 mW ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

13N03

Abstract: 13n03l JESD22 IPP13
Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

IPD13N03LA

Abstract: 13n03la smd diode 1139
Contextual Info: 13N03LA Preliminary data OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) VDS 25 RDS(on) 13 m
ID 30 A

13n03la

Abstract: 13N03 IPS13N03LA
Contextual Info: OptiMOS 2 Power-Transistor 13N03LA G 13N03LA G 13N03LA G 13N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on) product (FOM)

13n03la

Abstract: IPD13N03LA
Contextual Info: 13N03LA Rev. 1.1 OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) VDS 25 RDS(on) 13 m
ID 30 A V P- TO252 -3-11

13N03LA

Contextual Info: 13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

13N03

Abstract: DSA003242
Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target application 30 12.8 ID 30 V m: A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

13N03LA

Abstract: GD 364 IPF13N03LA *13N03LA 13n03l
Contextual Info: 13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 13.3 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

IPB13N03LB

Abstract: JESD22 13N03 C8150
Contextual Info: 13N03LB OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 30 R DS on),max 12.5 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: OptiMOS 2 Power-Transistor 13N03LA G 13N03LA G 13N03LA G 13N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 12.8 mΩ ID 30 A • N-channel, logic level

13n03la

Abstract: IPD13N03LA IPF13N03LA IPS13N03LA IPU13N03LA P-TO251-3-1 P-TO252-3-11
Contextual Info: OptiMOS 2 Power-Transistor 13N03LA G 13N03LA G 13N03LA G 13N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 12.8 mΩ ID 30 A • N-channel, logic level

13n03la

Abstract: 13N03 13n03l IPS13N03LA IPD13N03LA G IPF13N03LA PG-TO252-3-11 IPD13N03LA IPU13N03LA P-TO251-3-1
Contextual Info: OptiMOS 2 Power-Transistor 13N03LA G 13N03LA G 13N03LA G 13N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 12.8 mΩ ID 30 A • N-channel, logic level

13N03

Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

13n03la

Abstract: 13N03 13n03l S4160 equivalent Q67042-S4160 s4160 IPD13N03LA IPF13N03LA IPS13N03LA IPU13N03LA
Contextual Info: OptiMOS 2 Power-Transistor 13N03LA 13N03LA 13N03LA 13N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 12.8 mΩ ID 30 A • N-channel, logic level

S4160 equivalent

Abstract: 13n03l Q67042-S4160 13N03LA 13N03 IPU13N03LA s4160 fet to251
Contextual Info: Rev. 1.1 13N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature 25 VDS Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) RDS(on) ID V m
12.8 30 A P- TO251 -3-1

smd diode 1139

Contextual Info: 13N03LA Preliminary data OptiMOSâ 2 Power-Transistor Product Summary Feature 25 VDS Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) RDS(on) ID V m
12.8 30

Contextual Info: 13N03LB OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 30 R DS on),max 12.5 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)