IPP13 Search Results

Contextual Info: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

JESD22

Contextual Info: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

marking eb5

Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
Contextual Info: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R  , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC J +&.   Y" ,- I9 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

13N03

Abstract: 13n03l JESD22 IPP13
Contextual Info: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

139n08n

Abstract: D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO IPP139N08N3 JESD22 PG-TO-220-3
Contextual Info: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching 80 R DS(on),max (SMD) • Optimized technology for DC/DC converters V 13.6 ID mΩ 45 A • Excellent gate charge x R DS(on) product (FOM)

13N03

Abstract: DSA003242
Contextual Info: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target application 30 12.8 ID 30 V m: A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G  3 Power-Transistor Product Summary Features V 9H Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀ 0 R ,?>=1H฀,& Q฀(@D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC J +&. I9 Y ,- 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&

139n08n

Abstract: D225 SMD 136N08N IEC61249-2-21 IPP139N08N3 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730
Contextual Info: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features 80 V DS • Ideal for high frequency switching 13.6 R DS on ,max (SMD) • Optimized technology for DC/DC converters V mΩ 45 ID A • Excellent gate charge x R DS(on) product (FOM)

13N03

Contextual Info: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

2N7002DM

Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)

Contextual Info: H XILIN X XC3100A Field Programmable Gate Arrays June 1, 1996 Version 4.1 Product Specification Features Description • The XC3100A is a performance-optimized relative of the XC3000A and XC3100A families. While all families are foot­ print compatible, XC3100A family extends the typical sys­

TLE4957C

Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!

Contextual Info: fax id: 6010 PyfP PALCE20V8 Flash Erasable, Reprogrammable CMOS PAL Device Features • QSOP package available — 1 0 ,1 5 , and 25 ns com ’I version • Active pull-up on data input pins • Low power version 20V8L — 15, and 25 ns military/industrial versions

986 t04

Abstract: HIFN AG07 1155 PINmap 10SC1 AE26 AL01 AN32 B320 C4242
Contextual Info: -to view this document. enable JavaScript and -JavaScript must be enabledHifn 5NP4G-B Network Please Processor - reopen the document. -Boundary Scan Description Language - Boundary Scan Description Language IEEE P1149.1b