IPB136N08N3 Search Results
IPB136N08N3 Datasheets (1)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB136N08N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 13.6 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 45.0 A; | Original | 548.65KB | 11 |
IPB136N08N3 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB136N08N3GATMA1Trans MOSFET N-CH 80V 45A 3-Pin(2+Tab) D2PAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB136N08N3GATMA1 | 4,000 | 579 |
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IPB136N08N3GATMA1 | 4,000 | 1 |
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Infineon Technologies AG IPB136N08N3GPOWER FIELD-EFFECT TRANSISTOR, 45A I(D), 80V, 0.0136OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB136N08N3G | 50 |
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IPB136N08N3G | 7,120 |
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