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    Infineon Technologies AG

    Infineon Technologies AG IPB136N08N3GATMA1

    Power Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPB136N08N3GATMA1 4,000 1
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    Infineon Technologies AG IPB136N08N3G

    Power Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB136N08N3G 7,120
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    136N08N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    139n08n

    Abstract: D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO IPP139N08N3 JESD22 PG-TO-220-3
    Contextual Info: IPP139N08N3 G IPI139N08N3 G 136N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching 80 R DS(on),max (SMD) • Optimized technology for DC/DC converters V 13.6 ID mΩ 45 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipp139n08n3ipi139n08n3ipb136n08n3pg-to-220-3+10pg-to-262-3pg-to-263-3139n08nd225 smdsmd diode d45136n08nmarking d45139n08pg-tojesd22 PDF

    139n08n

    Abstract: D225 SMD 136N08N IEC61249-2-21 IPP139N08N3 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730
    Contextual Info: IPP139N08N3 G IPI139N08N3 G 136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features 80 V DS • Ideal for high frequency switching 13.6 R DS on ,max (SMD) • Optimized technology for DC/DC converters V mΩ 45 ID A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipp139n08n3ipi139n08n3ipb136n08n3iec61249-2-21+10pg-to-220-3pg-to-262-3pg-to-263-3139n08nd225 smd136n08nsmd f45ipp139n08n3 gd225 dioded45 1730 PDF